Journal ArticleDOI
Maskless fabrication of field-emitter array by focused ion and electron beam
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In this paper, a two-step etch process in a Nb/SiO2/Si structure was implemented for the suppression of beam-induced damage and contamination in the processed area during the production of the gate openings.Abstract:
Niobium-gated field-emitter arrays with Pt tips were fabricated using focused ion and electron beams. A promising approach, based on a two-step etch process in a Nb/SiO2/Si structure, has been implemented for the suppression of beam-induced damage and contamination in the processed area during the production of the gate openings. Only the top Nb layer was removed for gate openings by physical sputtering using the focused ion beam. The underlying SiO2 was subsequently removed by wet etching. Deposition of Pt pillars into these gate openings using electron-beam-induced chemical reaction resulted in field emission at an applied gate bias of 50 V even without any thermal annealing process.read more
Citations
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Gas-assisted focused electron beam and ion beam processing and fabrication
TL;DR: A review of the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems can be found in this article, where the authors also discuss structures that are made for research purposes or for demonstration of the processing capabilities.
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The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors.
TL;DR: Gas phase and surface science studies can provide valuable insight into potential mechanisms governing deposit formation in FEBID, and are an important stepping-stone toward better understanding the fundamental physics behind the deposition process and establishing design criteria for optimizedFEBID precursors.
Journal ArticleDOI
Highly conductive and pure gold nanostructures grown by electron beam induced deposition
Mostafa M. Shawrav,Philipp Taus,Heinz D. Wanzenboeck,Markus Schinnerl,Michael Stöger-Pollach,Stefan Schwarz,Andreas Steiger-Thirsfeld,Emmerich Bertagnolli +7 more
TL;DR: This work introduces an additive direct-write nanofabrication technique for producing extremely conductive gold nanostructures from a commercial metalorganic precursor by using water as an oxidative enhancer during direct- write deposition.
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Growth and simulation of high-aspect ratio nanopillars by primary and secondary electron-induced deposition
TL;DR: In this article, the authors demonstrate that primary electrons (PEs) contribute significantly to the deposition for nanoscale EBID over the electron beam energy range (500-20keV).
Journal ArticleDOI
Nanotips: Growth, Model, and Applications
TL;DR: In this article, different growth techniques used for the synthesis of the nanotips have been outlined and compared against each other including, etching, pyrolysis, physical, and chemical vapour deposition.
References
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Journal ArticleDOI
Focused ion beam fabrication of submicron gold structures
TL;DR: In this article, focused ion beams are used to repair photolithography masks and are of increasing technological interest in the repair of x-ray lithography mask and in integrated circuit restructuring.
Journal ArticleDOI
Focused ion beam deposition of Pt containing films
J. Puretz,L. W. Swanson +1 more
TL;DR: Focused ion beam induced deposition of platinum films from a gas of methylcyclopentadienyl trimethyl platinum was reported in this article. But the results were limited to the case of W(CO)6 films.
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Focused ion beam induced deposition of platinum for repair processes
TL;DR: In this article, focused ion beam induced deposition of platinum from a gas of trimethyl platinum has been demonstrated and used for integrated circuit repair, and conductors on an actual integrated circuit have been modified by milling and filling a via to connect two Al lines in a sandwiched configuration as well as by connecting two vias through passivation and connecting two adjacent Al lines.
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Maskless ion beam assisted deposition of W and Ta films
TL;DR: In this paper, the authors investigated the characteristics of maskless ion beam assisted deposition for W and Ta films and measured the deposited film composition by Auger electron spectroscopy, which indicated that the decomposition is induced in WF6 or Ta(OC2H5)5 adsorbed on the target surface by the ion bombardment and unvolatile w and Ta are deposited.
Journal ArticleDOI
Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition
TL;DR: In this article, tetramethoxysilane as a precursor for ion beam induced metal deposition has been investigated and the influence of beam parameters dwell time and loop time on the material deposition rate was discussed and compared to model calculations.