Journal ArticleDOI
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
I. P. Smorchkova,E. Haus,B. Heying,Peter Kozodoy,Paul T. Fini,J. P. Ibbetson,Sarah L. Keller,Steven P. DenBaars,James S. Speck,Umesh Mishra +9 more
TLDR
In this article, the amount of incorporated Mg atoms changes approximately linearly with incident Mg flux, and the hole mobility depends strongly on the hole concentration, varying from μp=24.8×1017 cm2/VAbstract:
GaN:Mg layers grown by plasma-assisted molecular-beam epitaxy at 650 °C are investigated. Secondary-ion-mass-spectroscopy measurements reveal uniform Mg doping profiles with very sharp boundaries. The amount of incorporated Mg atoms changes approximately linearly with incident Mg flux. Hall measurements on p-type GaN:Mg layers show that about 1%–2% of all Mg atoms are ionized at room temperature. The hole mobility depends strongly on the hole concentration, varying from μp=24 cm2/V s for p=1.8×1017 cm−3 to μp=7.5 cm2/V s for p=1.4×1018 cm−3. GaN p–n diodes with molecular-beam-epitaxy-grown p regions are analyzed using current–voltage measurements.read more
Citations
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Journal ArticleDOI
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
Huili Xing,D. S. Green,Haijiang Yu,Tom Mates,Peter Kozodoy,Stacia Keller,Steven P. DenBaars,Umesh K. Mishra +7 more
TL;DR: In this article, the role of memory effect, surface segregation, and diffusion associated with Mg was investigated in metalorganic chemical vapor deposition (MOCVD) and showed that a Mg-rich film is present on MOCVD as-grown GaN:Mg base layers and can be removed by acid etch.
Journal ArticleDOI
Gallium nitride based transistors
Huili Grace Xing,Sarah L. Keller,Y-F Wu,L. McCarthy,I.P. Smorchkova,D. Buttari,Robert Coffie,D. S. Green,Giacinta Parish,Sten Heikman,L. Shen,N.-Q. Zhang,J J Xu,Bernd Keller,Steven P. DenBaars,Umesh K. Mishra +15 more
TL;DR: In this article, an overview of progress in GaN electronic devices along with recent results from work at UCSB is presented along with critical issues involved in the growth of high quality AlGaN/(AlN)/GaN heterostructures and GaN:Mg by metal-organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE) and the device fabrication are discussed.
Journal ArticleDOI
Faceted inversion domain boundary in GaN films doped with Mg
TL;DR: In this paper, the inversion domain boundary is faceted predominantly along the {0001} and {h,h,−2h,l} planes, with l/h approximately equal to 3.
Journal ArticleDOI
Magnesium incorporation in GaN grown by molecular-beam epitaxy
TL;DR: In this article, a series of Mg step-doped epitaxial GaN layers grown by rf-plasma-assisted molecular-beam epitaxy was studied for both (0001, or Ga-polarity and (0001) or N-Polarity orientations.
Journal ArticleDOI
Influence of microstructure on the carrier concentration of Mg-doped GaN films
TL;DR: In this paper, a combination of secondary ion mass spectrometry and transmission electron microscopy indicates a steadily increasing Mg incorporation during growth and the formation of inversion domains at these high concentrations.
References
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The Blue Laser Diode: GaN based Light Emitters and Lasers
Shuji Nakamura,Gerhard Fasol +1 more
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
Journal ArticleDOI
High-power GaN P-N junction blue-light-emitting diodes
TL;DR: In this paper, high power p-n junction blue-light-emitting diodes (LEDs) were fabricated using GaN films grown with GaN buffer layers.
Journal ArticleDOI
Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition
TL;DR: In this article, the activation kinetics of acceptors were investigated for heteroepitaxial layers of GaN, doped with Mg. After growth, the samples were exposed to isochronal rapid thermal anneals in the temperature range from 500 to 775°C.
Journal ArticleDOI
Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
TL;DR: In this paper, Mg-doped GaN films were grown with GaN buffer layers on a sapphire substrate and the hole concentration was 2×1015/cm3, the hole mobility was 9 cm2/Vs and the resistivity was 320 Ωcm at room temperature.