Modeling of Soft-Switching Losses of IGBTs in High-Power High-Efficiency Dual-Active-Bridge DC/DC Converters

TLDR: In this article, the authors analyzed the behavior of the internal charge dynamics in high-voltage (HV) semiconductors, giving a clear base to perform overall converter optimizations and to understand the previously proposed zero-current-switching techniques for insulated-gate bipolar transistor (IGBT)-based resonant dual active bridges.

Abstract: Soft-switching techniques are very attractive and often mandatory requirements in medium-voltage and medium-frequency applications such as solid-state transformers. The effectiveness of these soft-switching techniques is tightly related to the dynamic behavior of the internal stored charge in the utilized semiconductor devices. For this reason, this paper analyzes the behavior of the internal charge dynamics in high-voltage (HV) semiconductors, giving a clear base to perform overall converter optimizations and to understand the previously proposed zero-current-switching techniques for insulated-gate bipolar-transistor (IGBT)-based resonant dual active bridges. From these previous approaches, the two main concepts that allow switching loss reduction in HV semiconductors are identified: 1) shaping of the conducted current in order to achieve a high recombination time in the previously conducting semiconductors; and 2) achieving zero-voltage-switching (ZVS) in the turning-on device. The means to implement these techniques in a triangular-current-mode dual-active-bridge converter, together with the benefits of the proposed approaches, are analyzed and experimentally verified with a 1.7-kV IGBT-based neutral-point-clamped (NPC) bridge. Additionally, the impact of the modified currents in the converter's performance is quantified in order to determine the benefits of the introduced concepts in the overall converter.