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Journal ArticleDOI

Modeling the Thermal Conductivity and Phonon Transport in Nanoparticle Composites Using Monte Carlo Simulation

TLDR
In this paper, a Monte Carlo simulation was applied to study the thermal conductivity of silicon germanium (Si-Ge) nanocomposites, which are of great interest for high-efficiency thermoelectric material development.
Abstract
This paper presents a Monte Carlo simulation scheme to study the phonon transport and the thermal conductivity of nanocomposites. Special attention has been paid to the implementation of periodic boundary condition in Monte Carlo simulation. The scheme is applied to study the thermal conductivity of silicon germanium (Si-Ge) nanocomposites, which are of great interest for high-efficiency thermoelectric material development. The Monte Carlo simulation was first validated by successfully reproducing the results of (two-dimensional) nanowire composites using the deterministic solution of the phonon Boltzmann transport equation reported earlier and the experimental thermal conductivity of bulk germanium, and then the validated simulation method was used to study (three-dimensional) nanoparticle composites, where Si nanoparticles are embedded in Ge host. The size effects of phonon transport in nanoparticle composites were studied, and the results show that the thermal conductivity of nanoparticle composites can be lower than that of the minimum alloy value, which is of great interest to thermoelectric energy conversion. It was also found that randomly distributed nanopaticles in nanocomposites rendered the thermal conductivity values close to that of periodic aligned patterns. We show that interfacial area per unit volume is a useful parameter to correlate the size effect of thermal conductivity in nanocomposites. The key for the thermal conductivity reduction is to have a high interface density where nanoparticle composites can have a much higher interface density than the simple ID stacks, such as superlattices. Thus, nanocomposites further benefit the enhancement of thermoelectric performance in terms of thermal conductivity reduction. The thermal conductivity values calculated by this work qualitatively agrees with a recent experimental measurement of Si-Ge nanocomposites.

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Journal ArticleDOI

Bulk nanostructured thermoelectric materials: current research and future prospects

TL;DR: In this paper, the authors introduce the principles and present status of bulk nanostructured materials, then describe some of the unanswered questions about carrier transport and how current research is addressing these questions.
Journal ArticleDOI

Band Engineering of Thermoelectric Materials

TL;DR: This Review focuses on manipulation of the electronic and atomic structural features which makes up the thermoelectric quality factor, and the principles used are equally applicable to most good thermoeLECTric materials that could enable improvement of thermoelectedric devices from niche applications into the mainstream of energy technologies.
Journal ArticleDOI

Perspectives on thermoelectrics: from fundamentals to device applications

TL;DR: In this article, Minnich et al. reviewed the progress made in thermoelectrics over the past two years on charge and heat carrier transport, strategies to improve the thermiolectric figure of merit, with new discussions on device physics and applications.

Perspectives on thermoelectrics: from fundamentals to device applications

TL;DR: In this article, Minnich et al. reviewed the progress made in thermoelectrics over the past two years on charge and heat carrier transport, strategies to improve the thermiolectric figure of merit, with new discussions on device physics and applications.
Journal ArticleDOI

A Promising Approach to Enhanced Thermoelectric Properties Using Carbon Nanotube Networks

TL;DR: The thermoelectric performance of the composites could be remarkably enhanced compared with both of their bulk parent samples, which is not consistent with the early theoretical conclusions about composites.
References
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Journal ArticleDOI

Thin-film thermoelectric devices with high room-temperature figures of merit

TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
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New Directions for Low-Dimensional Thermoelectric Materials**

TL;DR: In this article, the ability to achieve a simultaneous increase in the power factor and a decrease in the thermal conductivity of the same nanocomposite sample and for transport in the same direction is discussed.
Journal ArticleDOI

Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit

TL;DR: In the temperature range 600 to 900 kelvin, the AgPbmSbTe2+m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoeLECTric power generation from heat sources.
Journal ArticleDOI

Thermal boundary resistance

TL;DR: In this article, the thermal boundary resistance at interfaces between helium and solids (Kapitza resistance) and thermal boundary resistances at interfaces interfaces between two solids are discussed for temperatures above 0.1 K. The apparent qualitative differences in the behavior of the boundary resistance in these two types of interfaces can be understood within the context of two limiting models of boundary resistance, the acoustic mismatch model, which assumes no scattering, and the diffuse mismatch model that all phonons incident on the interface will scatter.
Journal ArticleDOI

Quantum dot superlattice thermoelectric materials and devices.

TL;DR: It is demonstrated that improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3thermoelectric materials using a n-type film in a one-leg thermoelectrics device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.8 K.
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