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Noise in solid state devices and circuits
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TLDR
In this paper, the authors propose a method to generate 1/f noise noise in particular Amplifier Circuits Mixers by using thermal noise shot and flicker noise, respectively.Abstract:
Mathematical Methods Noise Characterization Noise Measurements Thermal Noise Shot Noise Generation - Recombination Noise Flicker Noise or 1/f Noise Noise in Particular Amplifier Circuits Mixers Miscellaneous Problems Appendixes Index.read more
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Journal ArticleDOI
Field-induced generation-recombination noise in (100) n-channel Si-MOSFET's at T = 4.2 K . I. Theory
E.A. Hendriks,R.J.J. Zijlstra +1 more
TL;DR: In this paper, the authors derived some expressions for the noise relaxation time and the spectral noise intensity of the drain current which are associated with a generation-recombination process in a MOSFET at a single energy level.
Dissertation
Vertical profile engineering and reliability study of silicon-germanium heterojunction bipolar transistors
TL;DR: Important conclusions include: (1) SiGe devices do not suffer from early catastrophic failure under the condition applied; (2) inclusion of Ge in the base may potentially improve the base-emitter junction reliability; and, (3) existing homojunction theory the hot-electron degradation model can accurately model device degradation behavior under reverse current stress.
Book ChapterDOI
Nanoscopic Architecture and Microstructure
Koji Maeda,Hiroshi Mizubayashi +1 more
TL;DR: In this paper, a wide range of experimental techniques are presented, so that the choice of which technique to employ on starting a study may not be clear, and also bearing in mind that some of the techniques presented in this chapter are based on physical principles, which are also relevant to the measurement methods compiled in Chaps. 6 and 11.
DissertationDOI
Rauschspektroskopie von Quantenpunktsystemen
TL;DR: In this paper, it was shown that Coulomb and Pauli blocking can lead to suppressed shot noise power in the resonant tunneling regime of single quantum dots consistent with theoretical predictions.
Journal ArticleDOI
Comparison of noise between passivated and unpassivated AlGaAs/GaAs and GaInP/GaAs HBTs
TL;DR: In this paper, a comparison of GaInP/GaAs heterojunction bipolar transistors (HBTs) of similar geometry is presented, and the 1/f noise level and bias dependence is quite similar in all transistors.