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Noise in solid state devices and circuits
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TLDR
In this paper, the authors propose a method to generate 1/f noise noise in particular Amplifier Circuits Mixers by using thermal noise shot and flicker noise, respectively.Abstract:
Mathematical Methods Noise Characterization Noise Measurements Thermal Noise Shot Noise Generation - Recombination Noise Flicker Noise or 1/f Noise Noise in Particular Amplifier Circuits Mixers Miscellaneous Problems Appendixes Index.read more
Citations
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Journal ArticleDOI
Wide-band CMOS cascode low-noise amplifier design based on source degeneration topology
J. Lerdworatawee,Won Namgoong +1 more
TL;DR: By allowing an arbitrary source degeneration and employing a general input matching network, the proposed wide-band CMOS LNA can be shown for any choice of transistor width to achieve the minimum noise figure at all frequencies of interest.
Journal ArticleDOI
Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors
TL;DR: In this paper, the first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs was reported, and the 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAsHBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.
Journal ArticleDOI
A 5.5-mW ${+}$ 9.4-dBm IIP3 1.8-dB NF CMOS LNA Employing Multiple Gated Transistors With Capacitance Desensitization
Tae Hwan Jin,Tae Wook Kim +1 more
TL;DR: In this article, an extra capacitance is added between gate and source nodes of input transistors in a parallel manner, which can desensitize the contribution of second-order harmonic feedback to IMD3.
Proceedings ArticleDOI
Analysis of 1/f noise in CMOS APS
Hui Tian,Abbas El Gamal +1 more
TL;DR: In this paper, the effect of 1/f noise on low frequency analog circuits such as CMOS image sensors becomes more pronounced, and therefore must be more accurately estimated, even though the process is nonstationary.
Journal ArticleDOI
High frequency noise of MOSFETs. II. Experiments
TL;DR: In this article, Chen et al. used direct de-embedding techniques for obtaining the intrinsic scattering and noise parameters of modern MOSFETs at high-frequencies.