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Noise in solid state devices and circuits
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TLDR
In this paper, the authors propose a method to generate 1/f noise noise in particular Amplifier Circuits Mixers by using thermal noise shot and flicker noise, respectively.Abstract:
Mathematical Methods Noise Characterization Noise Measurements Thermal Noise Shot Noise Generation - Recombination Noise Flicker Noise or 1/f Noise Noise in Particular Amplifier Circuits Mixers Miscellaneous Problems Appendixes Index.read more
Citations
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Proceedings ArticleDOI
RF-Noise of Deep-Submicron MOSFETs: Extraction and Modeling
TL;DR: In this article, a method for the extraction of all four noise parameters of a MOSFET (channel noise, induced gate noise and complex correlation coefficient) based on a description of noise by means of correlation matrices is presented.
Journal ArticleDOI
Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications
Sheng-Chun Wang,Pin Su,Kun-Ming Chen,Kuo-Hsiang Liao,Bo-Yuan Chen,Sheng-Yi Huang,Cheng-Chou Hung,Guo-Wei Huang +7 more
TL;DR: In this paper, an external tuner-based method was used to demonstrate a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65-nm MOSFETs for the first time.
Journal ArticleDOI
The Analog Behavior of Pseudo Digital Ring Oscillators Used in VCO ADCs
TL;DR: In this article, the three most relevant pseudo-digital ring oscillator circuits for VCO A/D conversion are modeled by an equivalent 2-terminal diode-like element.
Proceedings ArticleDOI
High-Speed Resonant-Tunneling Diodes
TL;DR: In this paper, a detailed analysis of the mechanisms that limit the speed of a resonant-tunneling diodes is presented, including a calculation of the quasibound state lifetime, a determination of the device capacitance from the electrostatic band-bending, and an estimate of the negative differential conductance using two different methods.
Journal ArticleDOI
Burst-type noise mechanisms in bipolar transistors
TL;DR: In this article, two types of burst noise have been observed in silicon bipolar transistors and they can be characterized by the typical frequency dependence of their current fluctuation spectra, which can be described mathematically as 1/ǫ noise modulated by the burst noise.