Normal‐incidence strained‐layer superlattice Ge0.5Si0.5/Si photodiodes near 1.3 μm

TLDR: In this article, a strain-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated, which exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence.

Abstract: Ge0.5Si0.5 strained‐layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.