Journal ArticleDOI
On the voltage‐dependent series resistance of a planar Schottky barrier diode
P. Chattopadhyay,A. Banerjee +1 more
TLDR
In this article, the series resistance of a planar Schottky barrier diode fabricated on p-type silicon is investigated by analysing the currentvoltage characteristics of the device, and the anomaly has been resolved by postulating a potential barrier at the ohmic contact and drawing analogy to serially connected high and low barrier diodes in a back-to-back configuration.Abstract:
The series resistance of a planar Schottky barrier diode fabricated on p‐type silicon is investigated by analysing the current–voltage characteristics of the device. Different characterisation techniques have been applied to obtain the value of the series resistance of the device. It is found that the existing techniques are either not applicable for the present device or yield unreliable value for the series resistance. A numerical analysis of the I–V data reveals unusual voltage dependence of the series resistance of the device. The anomaly has been resolved by postulating a potential barrier at the ohmic contact and drawing analogy to serially connected high‐ and low‐barrier diodes in a back‐to‐back configuration. It is found that the voltage dependence of the series resistance of the device can be described by certain empirical law, which also applies to device on GaN. The measured voltage behaviour of the ac resistance and capacitance of the device at different frequencies have been found to be consi...read more
Citations
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Journal ArticleDOI
Numerical analysis of inhomogeneous Schottky diode with discrete barrier height patches
Priyanka Kaushal,Subhash Chand +1 more
TL;DR: In this article, the potential profile inside the semiconductor at the metal-semiconductor contact is simulated by numerically solving the Poisson equation and the drift diffusion equations for inhomogeneous Schottky diode.
Journal ArticleDOI
Azido bridged binuclear copper(II) Schiff base compound: synthesis, structure and electrical properties
TL;DR: An azido bridged dinuclear complex [Cu(L−)(μ1,1N3]2 (1) was synthesized by a 1':'1 condensation of N-cyclohexyl-1,3-propanediamine and 5-bromosalicylaldehyde (HL) as discussed by the authors, which was subsequently characterized based on elemental analyses, IR, single-crystal X-ray diffraction, a Hirshfeld study, FESEM, ESI-MS, powder XRD and also DFT studies successfully.
Journal ArticleDOI
Carrier concentration variety over multisectoral boron-doped HPHT diamond
Journal ArticleDOI
Mononuclear copper(II) Schiff base complex: synthesis, structure, electrical analysis and protein binding study
TL;DR: In this article, a distorted square pyramidal mononuclear copper(II) complex [Cu(L)(N3)] (1), which was synthesized from a tetradentate Schiff base (HL), prepared by the condensation of salicylaldehyde and N-2-(aminoethyl)-1,3-propanediamine.
Journal ArticleDOI
Effect of Schottky-ohmic separation length on the ac properties of planar Schottky barrier diode
A. Banerjee,P. Chattopadhyay +1 more
TL;DR: In this paper, the effects of Schottky-ohmic separation length on the capacitance and ac resistance of Al-p-Si barrier diodes in planar configuration have been studied.
References
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Book
Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes
H C Card,E H Rhoderick +1 more
TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Journal ArticleDOI
A modified forward I‐V plot for Schottky diodes with high series resistance
TL;DR: In this article, it was shown that a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI•vs•V plot.