Journal ArticleDOI
Optimization of optical waveguide modulators based on Wannier-Stark localization: an experimental study
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TLDR
In this paper, optical waveguide modulation results were obtained using Wannier-Stark localization in InGaAs-InAlAs superlattices grown by molecular beam epitaxy on InP substrates.Abstract:
The authors present optical waveguide modulation results obtained using Wannier-Stark localization in InGaAs-InAlAs superlattices grown by molecular beam epitaxy on InP substrates. It is shown that the results are in good agreement with a previously reported wavefunction model. The authors experimentally investigate the modulation behavior as a function of the electroabsorptive superlattice thickness. For this purpose the authors introduce the extinction ratio per unit waveguide length and per unit electric field as a relevant figure of merit that is broadly applicable to any electroabsorptive superlattice modulator. It is shown that inhomogeneous broadening imposes an optimum thickness for the electroabsorptive superlattice. >read more
Citations
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Journal ArticleDOI
Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures
Eric Tournié,Kalus H. Ploog +1 more
TL;DR: In this paper, the authors review the newly emerging field of surfactant-mediated molecular beam epitaxy (SM-MBE) and its applications to the growth of strained layer heterostructures (SLHs).
Journal ArticleDOI
On the transmission performances and the chirp parameter of a multiple-quantum-well electroabsorption modulator
F. Dorgeuille,F. Devaux +1 more
TL;DR: In this article, the effective chirp parameter of a multiple-quantum-well (MQW) electroabsorption modulator was measured with accuracy for several operating wavelengths in the 1.5 /spl mu/m window.
Journal ArticleDOI
Theoretical design optimization of multiple-quantum-well electroabsorption waveguide modulators
M.E. Chin,William S. C. Chang +1 more
TL;DR: In this paper, a large-core multimode passive waveguide with a thin buried active layer is designed to yield a high coupling efficiency to conventional single-mode fibers, and the quantum well material structure is optimized to maximize Delta alpha/Delta F/sup 2, where Delta alpha is the absorption change, alpha /sub 0/ is the residual absorption at zero bias, and Delta F is the swing of the applied electric field.
Journal ArticleDOI
Electroabsorption modulators for high-bit-rate optical communications: a comparison of strained InGaAs/InAIAs and InGaAsP/InGaAsP MQW
TL;DR: In this article, the power saturation mechanism was proposed to explain the nonlinearity of the InGaAs/lnAIAs modulator in the context of optical fiber communications in terms of loss, drive voltage, bandwidth, eye diagram, bit error rate measurements and optical power handling capacity.
Journal ArticleDOI
Experimental optimisation of MQW electroabsorption modulators with up to 40 GHz bandwidths
TL;DR: In this article, three MQW electroabsorption modulator structures made of 7, 13 and 20 wells are reported, and the bandwidth is shown to increase linearly with intrinsic region thickness up to 40 GHz, with negligible penalty on the drive voltage.
References
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Journal ArticleDOI
Handbook of Mathematical Functions
Journal ArticleDOI
Superlattice and negative differential conductivity in semiconductors
Leo Esaki,Raphael Tsu +1 more
TL;DR: The study of superlattices and observations of quantum mechanical effects on a new physical scale may provide a valuable area of investigation in the fieId of semiconductors.
Journal ArticleDOI
Behavior of the Electronic Dielectric Constant in Covalent and Ionic Materials
S. H. Wemple,M. DiDomenico +1 more
TL;DR: In this article, a single effectiveoscillator fit was used to analyze refractive-index dispersion data below the interband absorption edge in more than 100 widely different solids and liquids.
Journal ArticleDOI
Electric field dependence of optical absorption near the band gap of quantum-well structures.
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
TL;DR: Detailed calculations of the shift of exciton peaks are presented including (i) exact solutions for single particles in infinite wells, (ii) tunneling resonance calculations for finite wells, and (iii) variational calculations ofexciton binding energy in a field.
Journal ArticleDOI
Stark localization in GaAs-GaAlAs superlattices under an electric field.
TL;DR: It is observed that a strong electric field shifts to higher energies the photoluminescence and photocurrent peaks of a GaAs-${\mathrm{Ga}}_{0.65}$ as superlattice of period D (=65 \AA{}), which is explained by a field-induced localization of carriers to isolated quantum wells.