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Organic materials as a passivation layer for metal oxide semiconductors
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In this paper, the authors provide an overview on the enhanced stability of metal oxide thin-film transistors via the employment of organic materials as passivation layers, including the most recent accomplishments in organic passivation for metal oxide semiconductors.Abstract:
Metal oxide semiconductors have gained much interest in the field of next generation consumer electronics due to the worldwide development of flexible electronic devices and strong demand for high-resolution, high-frame-rate displays For the practical application of metal oxide thin-film transistors on the industrial level, it is crucial to secure device stability This highlight article provides an overview on the enhanced stability of metal oxide thin-film transistors via the employment of organic materials as passivation layers Discussions on the organic materials which are categorized into four groups include the most recent accomplishments in organic passivation for metal oxide semiconductors The most up-to-date modification of the metal oxide semiconductor back channel, rationales for the employment of organic materials as a passivation layer, and discussions on the mechanism of device stability enhancement are presented Thus, this review is expected to inspire new research for future developments and applications of organic passivation layers for metal oxide semiconductorsread more
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References
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta,Masafumi Sano,Katsumi Abe,Toshiaki Aiba,Tohru Den,Hideya Kumomi,Kenji Nomura,Toshio Kamiya,Hideo Hosono +8 more
TL;DR: In this paper, a-IGZO channels were fabricated using amorphous indium gallium zinc oxide channels by rf-magnetron sputtering at room temperature.
Journal ArticleDOI
Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
Yong-Hoon Kim,Jae Sang Heo,Taehyeong Kim,Sungjun Park,Myung-Han Yoon,Jiwan Kim,Min Suk Oh,Gi-Ra Yi,Yong-Young Noh,Sung Kyu Park +9 more
TL;DR: Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature, which is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that ofthin- film transistors based on thermally annealed materials.
Journal ArticleDOI
Polymers for flexible displays: From material selection to device applications
TL;DR: In this paper, the kinds of polymers that are used, where and how polymer materials are used and the challenges to overcome in developing flexible displays are discussed and discussed in detail.
Journal ArticleDOI
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
TL;DR: In this paper, the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors was investigated, and the authors attributed the Vth instability to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress.
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