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Journal ArticleDOI

Photoacoustic observation of the exciton effect in GaSe.

Todorovic Dm, +1 more
- 15 Jul 1985 - 
- Vol. 24, Iss: 14, pp 2252-2255
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TLDR
In this article, photoacoustic and absorption spectra of single crystals of GaSe at room temperature were studied in the neighborhood of the intrinsic absorption edge, and the formation of excitons was observed.
Abstract
Photoacoustic and absorption spectra of single crystals of GaSe at room temperature have been studied in the neighborhood of the intrinsic absorption edge. Analysis of the spectra showed formation of excitons. This is the first time that the exciton effect has been observed with photoacoustic spectroscopy.

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Citations
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Journal ArticleDOI

Terahertz Studies of the Dielectric Response and Second-Order Phonons in a GaSe Crystal

TL;DR: In this paper, the dielectric function and momentum relaxation time of a single-crystal GaSe were investigated using terahertz time-domain spectroscopy over the frequency range from 0.4 to 2.4THz.
Journal ArticleDOI

Exciton Binding Energy of Two-Dimensional Highly Luminescent Colloidal Nanostructures Determined from Combined Optical and Photoacoustic Spectroscopies.

TL;DR: A fully optical approach for R x determination based on a complementary combination of photoacoustic and transmission spectra is proposed, confirming the presence of robust excitons in highly confined 2D systems.
Journal ArticleDOI

Photoacoustic and electroacoustic properties of semiconductors

TL;DR: In this article, the theoretical analysis of the photoacoustic effect by simultaneous analysis of thermoelastic and radiative transport equations is presented, and the results of an investigation of the transport properties of semiconductors, i.e. investigation of electron-phonon interaction, are given.
Journal ArticleDOI

Photo-acoustic and thermo-acoustic properties of single-crystal SnS compared with its near-infrared optical and transport measurements

TL;DR: In this article, the photo-acoustic response and transmission spectra have been measured in the infrared range for single crystals of SnS and the phonon relaxation time was measured by a new thermo-acoustical method.
Journal ArticleDOI

Preparation and fundamental optical absorption edge of In4(P2Se6)3 single crystals

TL;DR: In this paper, the temperature dependence of the optical absorption edge of these crystals was studied at high absorption levels in the spectral range of direct optical transitions, and the influence of disorder on the width of Urbach tails was analyzed as well.
References
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Journal ArticleDOI

Theory of the photoacoustic effect with solids

TL;DR: In this article, a quantitative derivation for the acoustic signal in a photoacoustic cell in terms of the optical, thermal, and geometric parameters of the system is presented. And the theory predicts the dependence of the signal on the absorption coefficient of the solid, thereby giving a theoretical foundation for the technique of photoacoustical spectroscopy.
Journal ArticleDOI

Intensity of Optical Absorption by Excitons

TL;DR: In this paper, the intensity of optical absorption close to the edge in semiconductors is examined using band theory together with the effective-mass approximation for the excitons, and the experimental results on O and Ge are in good qualitative agreement with direct forbidden and indirect transitions, respectively.
Journal ArticleDOI

The electronic structure of GaSe

TL;DR: In this paper, the electronic band structure of the layer compound GaSe was calculated with the empirical pseudopotential method, where correct terms were added to the spherical atomic potentials in order to account for the weak van der Waals coupling between layers.
Journal ArticleDOI

Photoluminescence of GaSe

TL;DR: In this paper, the photoluminescence of a large number of pure and doped single crystals of GaSe has been investigated in the temperature range from 4.2 to 300 °K with excitation intensities varying between 4·10−5 and 3·102 kW cm−2.
Journal ArticleDOI

Optimization of optoacoustic cell for depth profiling studies of semiconductor surfaces

A. C. Tam, +1 more
TL;DR: In this article, the authors present a simple theory to explain how optoacoustic depth profiling studies of an opaque solid surface dimension and coupling gas can be carried out using an experimental cell suitable for such studies for a Si surface.
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