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Journal ArticleDOI

Raman spectroscopic evidence for hot-phonon generation in electrically biased carbon nanotubes.

Matti Oron-Carl, +1 more
- 27 Mar 2008 - 
- Vol. 100, Iss: 12, pp 127401-127401
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TLDR
Spectroscopic evidence for hot-phonon generation in biased single-walled carbon nanotubes is provided by measuring simultaneously the Stokes and anti-Stokes Raman lines of the G mode and of the radial-breathing mode as a function of current bias.
Abstract
We provide spectroscopic evidence for hot-phonon generation in biased single-walled carbon nanotubes by measuring simultaneously the Stokes and anti-Stokes Raman lines of the G mode and of the radial-breathing mode as a function of current bias. Using Bose-Einstein statistics we can directly calculate the phonon temperature from the intensity ratio of the anti-Stokes to Stokes lines. Upon nanotube biasing we observe (i) an increase of the G mode phonon temperature in contrast to the radial-breathing mode phonons that remain thermalized at room temperature, and (ii) no softening of the G mode. Based on these observations, we exclude current-induced thermal heating of the nanotube.

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Raman spectroscopy as a versatile tool for studying the properties of graphene

TL;DR: The state of the art, future directions and open questions in Raman spectroscopy of graphene are reviewed, and essential physical processes whose importance has only recently been recognized are described.
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Thermal conduction phenomena in carbon nanotubes and related nanostructured materials

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Energy dissipation in graphene field-effect transistors.

TL;DR: In this paper, the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band was measured, and it was shown that remote scattering by substrate polar surface phonons increases the energy transfer to the substrate and at the same time limits the high-bias electronic conduction of graphene.
Journal ArticleDOI

Energy dissipation in graphene field-effect transistors

TL;DR: In this article, the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band was measured, and it was shown that remote scattering by substrate polar surface phonons increases the energy transfer to the substrate and at the same time limits the high-bias electronic conduction of graphene.
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