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Recent advancement in the performance of solar cells by incorporating transition metal dichalcogenides as counter electrode and photoabsorber

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This article is published in International Journal of Energy Research.The article was published on 2019-06-25. It has received 29 citations till now. The article focuses on the topics: Auxiliary electrode & Schottky barrier.

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Light Generation and Harvesting in a Van der Waals Heterostructure

TL;DR: In this paper, a light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS2 and p-type silicon was realized.
Journal ArticleDOI

Recent advances in eco-friendly and cost-effective materials towards sustainable dye-sensitized solar cells

TL;DR: In this article, a review of the most adopted strategies to enhance the sustainability of materials in classical DSSC components (e.g., sensitizer, redox couple, electrolyte and counter-electrode), including smart synthesis and deposition procedures, is presented.
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Nickel-manganese phosphate: An efficient battery-grade electrode for supercapattery devices

TL;DR: In this article, the performance of binary metal phosphates of NiMn(PO4)2 synthesized through sono-chemical method was investigated and the impact of capacitive and diffusive contributions to the total capacity of the device was studied by employing Dunn's model.
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Rhenium substitutional doping for enhanced photoresponse of n-SnSe2/p-Si heterojunction based tunable and high-performance visible-light photodetector

TL;DR: In this article, the authors have doped tin diselenide (SnSe2) with Rhenium (Re) transition metal by Direct Vapor Technique (DVT) and then scaled down to the nanoscale dimension by liquid-phase exfoliation (LPE) method.
References
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Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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Atomically thin MoS2: a new direct-gap semiconductor

TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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Single-layer MoS2 transistors

TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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Van der Waals heterostructures

TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
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