Journal ArticleDOI
Recent materials characterizations of [2D] and [3D] thin film ferroelectric structures
James F. Scott,Finlay D. Morrison,M. Miyake,Pavlo Zubko,Xiaojie Lou,V. M. Kugler,S. Ríos,Ming Zhang,T. Tatsuta,O. Tsuji,T. J. Leedham +10 more
TLDR
In this paper, a review is given of single-crystal thin film ferroelectric oxides, emphasizing perovskite phases, together with some new developments on hafnia films.Abstract:
A review is given of ceramic and single-crystal thin film ferroelectric oxides, emphasizing perovskite phases, together with some new developments on hafnia films. It is shown that single-crystal barium titanate films behave as bulk down to at least 77 nm, with no finite size effects, no phase transition temperature shifts, and no dielectric peak broadening or change from first- to second-order transitions, suggesting that the gradient defect model of Bratkovsky and Levanyuk correctly describes such effects as extrinsic in experimental studies of equally thin ceramic thin films. In ceramic barium–strontium titanate (BST) thin films, it is shown that there is also no intrinsic broadening or shifts in phase transitions, with sharp, unshifted, bulk-like transitions observed only as re-entrant upon warming from cryogenic temperatures; this shows that phase transitions in ceramic thin films are dominated by kinetics and not thermodynamics and are definitely not equilibrium measurements. At high fields (>1 GV/m), the films exhibit space charge-limited conduction; no variable-range hopping is observed, contrary to recent studies on SrTiO3. Some novel, unconventional switching processes are discussed, comparing the “perimeter effect” (non-equilibrium, ballistic) with Molotskii's equilibrium model. Theory and experiment are described for [3D] nanotubes, nanorods, and nano-ribbons (or micro-ribbons). The layered-structure-perovskite–pyrochlore conversion in bismuth titanate is described together with the PbO+TiO2 phase separation in lead zirconate titanate during electrical breakdown, as are novel HfO2 precursors that demonstrate enhanced temperature crystallization from the amorphous state and hence commercial advantages for front-end processing.read more
Citations
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Journal ArticleDOI
High dielectric constant and frozen macroscopic polarization in dense nanocrystalline BaTiO3 ceramics
Maria Teresa Buscaglia,Massimo Viviani,Vincenzo Buscaglia,Liliana Mitoseriu,Andrea Testino,Andrea Testino,Paolo Nanni,Paolo Nanni,Zhe Zhao,Mats Nygren,Catalin Harnagea,D. Piazza,Carmen Galassi +12 more
TL;DR: Theoretical models for small ferroelectric particles predict a progressive decrease of the Curie temperature, spontaneous lattice strain, and polarization until the critical size corresponding to t... as discussed by the authors.
Journal ArticleDOI
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film
Takao Shimizu,Kiliha Katayama,Takanori Kiguchi,Akihiro Akama,Toyohiko J. Konno,Osami Sakata,Hiroshi Funakubo +6 more
TL;DR: This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferro electric properties including polarization and Curie temperature to conventional ferroElectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes.
Journal ArticleDOI
Perovskite ferroelectric nanomaterials
Nurxat Nuraje,Kai Su +1 more
TL;DR: This review provides an overview of recent research progress in the facile synthesis, characterization and various applications of perovskite ferroelectric nanomaterials and their applications and guidance for further studies in this area.
Journal ArticleDOI
Perovskite oxide nanotubes: synthesis, structural characterization, properties and applications
TL;DR: In this paper, a comprehensive survey on the research activities on perovskite oxide nanotubes (PONTs) can be found, which can not only be used as building blocks for miniaturized microelectronic devices but also offer fundamental scientific opportunities for investigating the intrinsic size effects of physical properties.
Journal ArticleDOI
General Approach to Well-Defined Perovskite MTiO3 (M = Ba, Sr, Ca, and Mg) Nanostructures
Wenjun Dong,Wenjun Dong,Bingjie Li,Yang Li,Xuebin Wang,Lina An,Chaorong Li,Benyong Chen,Ge Wang,Zhan Shi +9 more
TL;DR: In this article, a perovskite MTiO3 (M = Ba, Sr, Ca and Mg) nanostructures were successfully synthesized by a convenient hydrothermal method, employing MCl2 as M source and titanate nanowire as Ti precursor.
References
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Journal ArticleDOI
Wetting: statics and dynamics
TL;DR: In this paper, the authors present an attempt towards a unified picture with special emphasis on certain features of "dry spreading": (a) the final state of a spreading droplet need not be a monomolecular film; (b) the spreading drop is surrounded by a precursor film, where most of the available free energy is spent; and (c) polymer melts may slip on the solid and belong to a separate dynamical class, conceptually related to the spreading of superfluids.
Journal ArticleDOI
Space-Charge-Limited Currents in Solids
TL;DR: The presence of traps not only reduces the magnitude of space-charge-limited currents, but also is likely to distort the shape of the currentvoltage curve from an ideal square law to a much higher power dependence on voltage.
Journal ArticleDOI
Note on Ferroelectric Domain Switching
TL;DR: In this article, a phenomenological theory for ferroelectric domain switching is given, which takes into account the initial size of a reversed nucleus and also the shape of domains, and it is shown that the Avrami theorem can be easily derived if we utilize Kolmogorov's method.
Journal ArticleDOI
Rounding of First-Order Phase Transitions in Systems with Quenched Disorder
Michael Aizenman,Jan Wehr +1 more
TL;DR: For random-field models, this work rigorously proves uniqueness of the Gibbs state 2D Ising systems, and absence of continuous symmetry breaking in the Heisenberg model in d\ensuremath{\le}4, as predicted by Imry and Ma.
Journal ArticleDOI
Switching kinetics of lead zirconate titanate submicron thin‐film memories
TL;DR: In this article, the authors measured coercive field and switching voltage versus thickness in PbZr0.54Ti0.46O3 thin (0.15-0.50 μm) films, together with switching times and current transient shapes versus field and temperature.