Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies
TLDR
For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and field-plate technologies were fabricated and measured with reliable characteristics and a high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side- contact technology.Abstract:
For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential
resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V
measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current
of 0.65 A and high current drop of approximately 100 mA for a small ring diode width wd of 1.5µm with
600 nm effective diode height hd at a small threshold voltage of 8.5 V. This THz diode worked stable due
to good passivation as protection from electro-migration and ionisation between the electrodes as well as
a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a
fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.read more
Citations
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Journal ArticleDOI
The Gunn Effect
TL;DR: In this article, the Gunn Effect was discovered by J. B. Gunn of IBM in 1963, and it was shown that a two-terminal device made from such a material can produce microwave oscillations, which is primarily determined by the characteristics of the specimen of the material and not by any external circuit.
Journal ArticleDOI
Monte Carlo evaluation of GaN THz Gunn diodes
TL;DR: In this article, a self-consistent analytical-band Monte Carlo (MC) model capable of reproducing the electron drift velocity characteristics of GaN predicted theoretically by the first-principles full band MC model is used in order to evaluate systematically the performance of GAN-based Gunn diodes in transit time mode.
Journal ArticleDOI
Bias-Dependent Carrier Dynamics and Terahertz Performance of ErAs:In(Al)GaAs Photoconductors
TL;DR: In this paper , bias-dependent carrier dynamics of ErAs:In(Al)GaAs superlattice (SL) photoconductors were investigated and compared to a theoretical model.
Bias-Dependent Carrier Dynamics and Terahertz Performance of ErAs:In(Al)GaAs Photoconductors
TL;DR: In this article , bias-dependent carrier dynamics of In(Al)GaAs superlattice (SL) photoconductors were investigated and compared to a theoretical model, showing that the reduction of the carrier lifetime shifts the lifetime rolloff toward higher frequencies.
Journal ArticleDOI
Space-charge domains in n-type GaN epilayers under pulsed electric field
R M Balagula,L. Subacius,Justinas Jorudas,Pawel Prystawko,M. Grabowski,Michał Leszczyński,Irmantas Kašalynas +6 more
TL;DR: In this paper , the formation and drift of space-charge domains with velocity of sound were experimentally observed in charge current traces of a high-quality lightly doped GaN semiconductor under pulsed electric fields at room and liquid nitrogen temperatures.
References
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Journal ArticleDOI
Comparison of high field electron transport in GaN and GaAs
TL;DR: In this article, an ensemble Monte Carlo simulation is used to compare high field electron transport in bulk GaN and GaAs and the minimum transit time across a 1 μm GaN sample to be about 3.0 ps.
Journal ArticleDOI
The Gunn effect
TL;DR: In this article, the electron-transfer mechanism and domain propagation were investigated in gallium arsenide and microwave applications of the effect were not discussed, however, the authors focused on the basic phenomena in microwave applications and did not discuss the theoretical and experimental studies of the electron transfer mechanism.
Journal ArticleDOI
Two-terminal millimeter-wave sources
Heribert Eisele,George I. Haddad +1 more
TL;DR: In this paper, basic principles of operation, fundamental power-generation capabilities, and fabrication technologies are reviewed for three groups of two-terminal devices, i.e., resonant-tunneling diodes (RTDs), transferred-electron devices (TEDs), and transit-time Diodes.
Journal ArticleDOI
Bulk GaN and AlGaN∕GaN heterostructure drift velocity measurements and comparison to theoretical models
TL;DR: In this paper, the room temperature velocity-field characteristics for n-type gallium nitride and AlGaN∕GaN heterostructures, grown epitaxially on sapphire, were determined experimentally.
Journal ArticleDOI
First Observation of Bias Oscillations in GaN Gunn Diodes on GaN Substrate
TL;DR: In this article, the bias oscillation of GaN-based Gunn diodes realized on a n+-GaN substrate was investigated and a wide negative differential-resistance (NDR) region was measured for electrical-field values larger than a threshold field of 150 kV/cm.