Journal ArticleDOI
RF MEMS switches and switch circuits
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TLDR
In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.Abstract:
MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches.read more
Citations
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Dissertation
Advanced MEMS Microprobes for Neural Stimulation and Recording
TL;DR: MEMS fabrication processes were employed to produce non-breakable intracortical microprobes with an improved structural design, integrated with flexible interconnection cables and provide enough mechanical strength for penetration into the tissue.
Proceedings ArticleDOI
Low Voltage Dual Beam Capacitive Switches For Reconfigurable Microsystems
A Divya Sebastian,E.S. Shajahan +1 more
TL;DR: In this paper, a temperature tolerant switch design with improved RF (Radio Frequency) performance is proposed, which shows an improvement in RF characteristics of switch in the Ka band, i.e., return loss improved to −45 dB from −15 dB, and isolation improved to 0.45 μm beam deflection at 500 K.
echnique to characterize RF-MEMS capacitive sw
TL;DR: In this paper, a new small-signal characterization technique was proposed to accurately predict device lifetime and open the possibility of non-obtrusive, in-situ runtime monitoring of RF-MEMS switches.
References
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Journal ArticleDOI
Performance of low-loss RF MEMS capacitive switches
TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI
Distributed MEMS true-time delay phase shifters and wide-band switches
S. Barker,Gabriel M. Rebeiz +1 more
TL;DR: In this paper, a coplanar waveguide (CPW) transmission line with fixed-fixed beam MEMS bridge capacitors placed periodically over the transmission line, thus creating a slow-wave structure was designed.
Proceedings ArticleDOI
Lifetime characterization of capacitive RF MEMS switches
Charles L. Goldsmith,John C. Ehmke,A. Malczewski,Brandon W. Pillans,S. Eshelman,Zhimin Yao,J. Brank,M. Eberly +7 more
TL;DR: In this paper, the first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated and their lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage.
Journal ArticleDOI
High-isolation CPW MEMS shunt switches. 2. Design
TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Journal ArticleDOI
Contact physics of gold microcontacts for MEMS switches
D. Hyman,M. Mehregany +1 more
TL;DR: In this article, the authors present a tribological study of gold metallic contacts regarding contact resistance, heat dissipation, and surface damage in the normal-force regime of tens to hundreds of /spl mu/N, which is typical of the contact forces from microactuation.