Journal ArticleDOI
RF MEMS switches and switch circuits
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TLDR
In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.Abstract:
MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches.read more
Citations
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Book ChapterDOI
Review on Radio Frequency Micro Electro Mechanical Systems (RF-MEMS) Switch
R. Karthick,S. P. K. Babu +1 more
TL;DR: From the review, it is found that shunt-type configuration of RF-MEMS switch with electrostatic actuation, capacitive contact type and bridge structure are suitable for millimetre wave applications which are explored for future bandwidth hungry communication systems.
Journal ArticleDOI
A general dynamic theoretical model of elastic micro-structures with consideration of couple stress effects and its application in mechanical analysis of size-dependent properties
TL;DR: In this paper, a general and systematic theoretical framework of elastic micro-structures is established with the aid of modified couple stress theory for investigating the sizedependent property in small scale, in which the size-dependence is considered by introducing a material length scale parameter.
Journal ArticleDOI
Mechanical stop mechanism for overcoming MEMS fabrication tolerances
TL;DR: In this paper, a mechanical stop mechanism is developed in order to compensate MEMS fabrication tolerances in discrete positioning, which is implemented on SOI wafers using a common DRIE etching process.
Journal ArticleDOI
Matrix combination of elementary switches: general considerations and application to MEMS relays
TL;DR: In this article, the authors address some general aspects of switching devices consisting of a parallel series (matrix) combination of elementary switches, and discuss the derivation of criteria, which allow judging the potential of performance up-rating under rated current and interruption conditions.
References
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Journal ArticleDOI
Performance of low-loss RF MEMS capacitive switches
TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI
Distributed MEMS true-time delay phase shifters and wide-band switches
S. Barker,Gabriel M. Rebeiz +1 more
TL;DR: In this paper, a coplanar waveguide (CPW) transmission line with fixed-fixed beam MEMS bridge capacitors placed periodically over the transmission line, thus creating a slow-wave structure was designed.
Proceedings ArticleDOI
Lifetime characterization of capacitive RF MEMS switches
Charles L. Goldsmith,John C. Ehmke,A. Malczewski,Brandon W. Pillans,S. Eshelman,Zhimin Yao,J. Brank,M. Eberly +7 more
TL;DR: In this paper, the first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated and their lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage.
Journal ArticleDOI
High-isolation CPW MEMS shunt switches. 2. Design
TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Journal ArticleDOI
Contact physics of gold microcontacts for MEMS switches
D. Hyman,M. Mehregany +1 more
TL;DR: In this article, the authors present a tribological study of gold metallic contacts regarding contact resistance, heat dissipation, and surface damage in the normal-force regime of tens to hundreds of /spl mu/N, which is typical of the contact forces from microactuation.