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Journal ArticleDOI

RF MEMS switches and switch circuits

Gabriel M. Rebeiz, +1 more
- 01 Dec 2001 - 
- Vol. 2, Iss: 4, pp 59-71
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TLDR
In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
Abstract
MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches.

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Citations
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Journal ArticleDOI

New Isolation Optimization Method of RF MEMS Capacitive Switches

TL;DR: In this paper, a new isolation optimization method of radio frequency (RF) microelectromechanical systems (MEMS capacitive switches is carried out in a two-port network.
Journal ArticleDOI

Critical Process Issues in the Fabrication of a Lateral, Self-cleaning, MEMS Switch

TL;DR: In this article, a lateral contact MEMS switch was developed to address the needs for long life cycle, low contact resistance and low cost switches, which is unique in its self-cleaning of particles, self-alignment of contact surfaces and the mechanical anchoring of the contact metal into the switch structures.
Journal ArticleDOI

Controlling Environment and Contact Materials to Optimize Ohmic Microrelay Lifetimes

TL;DR: In this paper, the authors discuss how contact materials and operating environment affect device performance, showing that RuO2 coated microswitch contacts operating in the presence of O2 experience very limited contaminant accumulation even in hydrocarbon-rich environments.
Book ChapterDOI

White Space Communication Technologies: Reconfigurable RF front-ends for cognitive and software-defined radio

TL;DR: In this article, a cognitive and software-defined radio (CSDR) system has been presented as a potential solution to overcome problems that are encountered by the current multi-standard communication radios and also widely perceived spectral congestion hurdles.
References
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Journal ArticleDOI

Performance of low-loss RF MEMS capacitive switches

TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI

Distributed MEMS true-time delay phase shifters and wide-band switches

TL;DR: In this paper, a coplanar waveguide (CPW) transmission line with fixed-fixed beam MEMS bridge capacitors placed periodically over the transmission line, thus creating a slow-wave structure was designed.
Proceedings ArticleDOI

Lifetime characterization of capacitive RF MEMS switches

TL;DR: In this paper, the first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated and their lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage.
Journal ArticleDOI

High-isolation CPW MEMS shunt switches. 2. Design

TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Journal ArticleDOI

Contact physics of gold microcontacts for MEMS switches

TL;DR: In this article, the authors present a tribological study of gold metallic contacts regarding contact resistance, heat dissipation, and surface damage in the normal-force regime of tens to hundreds of /spl mu/N, which is typical of the contact forces from microactuation.