Journal ArticleDOI
RF MEMS switches and switch circuits
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TLDR
In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.Abstract:
MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches.read more
Citations
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Proceedings ArticleDOI
Laterally Actuated, Low Voltage, 3-Port RF MEMS Switch
TL;DR: In this article, a single-pole, double-throw (SPDT) switch was designed for an application in satellite-based communications, where the requirements were for low actuation voltage, high isolation, good vibration and shock tolerance, and low power consumption.
Journal IssueDOI
A wafer-capped, high-lifetime ohmic MEMS RF switch
TL;DR: In this paper, an electrostatically actuated broadband ohmic microswitch was developed for RF and microwave applications, which is a three-terminal device based on a cantilever beam and is fabricated using an all-metal, surface-micromachining process.
Journal ArticleDOI
A fully integrated SOI RF MEMS technology for system-on-a-chip applications
TL;DR: In this paper, a silicon-on-insulator (SOI) radio-frequency (RF) microelectromechanical systems (MEMS) technology compatible with CMOS and high-voltage devices for single-chip communication applications is experimentally demonstrated for the first time.
Journal ArticleDOI
Neutron Irradiation Effects on Domain Wall Mobility and Reversibility in Lead Zirconate Titanate Thin Films
Joseph T. Graham,Geoff L. Brennecka,Paulo J. Ferreira,Leo J. Small,David J. Duquette,Christopher A. Apblett,Sheldon Landsberger,Jon F. Ihlefeld +7 more
TL;DR: In this paper, the effects of neutron-induced damage on the ferroelectric properties of thin film lead zirconate titanate (PZT) were investigated, and changes in domain wall mobility and reversibility were characterized by polarization-electric field measurements, Rayleigh analysis, and analysis of first order reversal curves (FORC).
Proceedings ArticleDOI
Design of compact Ku band microstrip antenna for satellite communication
TL;DR: In this article, a microstrip antenna with notches and slit has been designed and simulated using Ansoft HFSS 3D electromagnetic simulation tool, which resonates at 15 GHz with return loss over 50dB and VSWR less than 1.
References
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Journal ArticleDOI
Performance of low-loss RF MEMS capacitive switches
TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI
Distributed MEMS true-time delay phase shifters and wide-band switches
S. Barker,Gabriel M. Rebeiz +1 more
TL;DR: In this paper, a coplanar waveguide (CPW) transmission line with fixed-fixed beam MEMS bridge capacitors placed periodically over the transmission line, thus creating a slow-wave structure was designed.
Proceedings ArticleDOI
Lifetime characterization of capacitive RF MEMS switches
Charles L. Goldsmith,John C. Ehmke,A. Malczewski,Brandon W. Pillans,S. Eshelman,Zhimin Yao,J. Brank,M. Eberly +7 more
TL;DR: In this paper, the first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated and their lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage.
Journal ArticleDOI
High-isolation CPW MEMS shunt switches. 2. Design
TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Journal ArticleDOI
Contact physics of gold microcontacts for MEMS switches
D. Hyman,M. Mehregany +1 more
TL;DR: In this article, the authors present a tribological study of gold metallic contacts regarding contact resistance, heat dissipation, and surface damage in the normal-force regime of tens to hundreds of /spl mu/N, which is typical of the contact forces from microactuation.