Journal ArticleDOI
RF MEMS switches and switch circuits
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In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.Abstract:
MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches.read more
Citations
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Journal ArticleDOI
Nonlinear-optical switching in gold nanoparticles driven by magneto-optical effects exhibited by carbon nanotubes
J. A. García-Merino,C. L. Martínez-González,Martín Trejo-Valdez,Hugo Martínez-Gutiérrez,Carlos Torres-Torres +4 more
TL;DR: In this article, a cascade system based on multiwall carbon nanotubes in thin film form and Au nanoparticles embedded in a TiO2 thin solid film were combined to achieve a nonlinear magneto-optical switching action.
Proceedings ArticleDOI
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Proceedings ArticleDOI
A novel 3D low voltage electrostatic RF MEMS switch with two movable electrodes
TL;DR: In this article, a 3D electrostatic RF MEMS switch with two movable electrodes is presented, which can be used as the basic building blocks for microwave switch matrices, multiplexers / demultiplexers, and phase shifters operating at microwave frequencies.
Patent
Low cost, 2d, electronically-steerable, artificial-impedance-surface antenna
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Journal ArticleDOI
Fabrication and characterization of a capacitive micromachined shunt switch
TL;DR: In this article, the design and fabrication of a capacitive shunt switch is described, based on a bridge structure that can be modulated using electrostatic actuation, and the switch has two states: when the bridge is up the signal passes through with less than 0.1 dB insertion loss.
References
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Journal ArticleDOI
Performance of low-loss RF MEMS capacitive switches
TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI
Distributed MEMS true-time delay phase shifters and wide-band switches
S. Barker,Gabriel M. Rebeiz +1 more
TL;DR: In this paper, a coplanar waveguide (CPW) transmission line with fixed-fixed beam MEMS bridge capacitors placed periodically over the transmission line, thus creating a slow-wave structure was designed.
Proceedings ArticleDOI
Lifetime characterization of capacitive RF MEMS switches
Charles L. Goldsmith,John C. Ehmke,A. Malczewski,Brandon W. Pillans,S. Eshelman,Zhimin Yao,J. Brank,M. Eberly +7 more
TL;DR: In this paper, the first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated and their lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage.
Journal ArticleDOI
High-isolation CPW MEMS shunt switches. 2. Design
TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Journal ArticleDOI
Contact physics of gold microcontacts for MEMS switches
D. Hyman,M. Mehregany +1 more
TL;DR: In this article, the authors present a tribological study of gold metallic contacts regarding contact resistance, heat dissipation, and surface damage in the normal-force regime of tens to hundreds of /spl mu/N, which is typical of the contact forces from microactuation.