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Journal ArticleDOI

RF MEMS switches and switch circuits

Gabriel M. Rebeiz, +1 more
- 01 Dec 2001 - 
- Vol. 2, Iss: 4, pp 59-71
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TLDR
In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
Abstract
MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches.

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Citations
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Journal ArticleDOI

A Compact Microstrip T-Type Switch for Narrowband Applications

TL;DR: A compact T-type switch that involves three different operational states providing high flexibility in signal routing and good performance in terms of transmission and isolation for each state is presented, in agreement with the simulations.
Proceedings ArticleDOI

Contactless RF MEMS switch using PZT actuation

TL;DR: A contactless piezoelectric RF MEMS switch has been designed and simulated and, due to the use of a contactless design based on variable capacitance the reliability issues affecting contacting-type MEMS switches are avoided.
Proceedings ArticleDOI

Cantilever for RF applications: Model and technology

TL;DR: In this article, a radio frequency (RF) microelectromechanical systems (MEMS) shunt cantilever is simulated using the Keysight Technologies Advanced Design System up to 65 GHz.
Proceedings ArticleDOI

Additively Manufactured, Low Loss 20 GHz DC Contact RF MEMS Switch Using Laterally Actuated, Fix-Free Beam

TL;DR: In this paper, a new type of 3D printed, electrostatically actuated DC contact RF MEMS switch is integrated within a suspended finite-ground coplanar waveguide (FG-CPW).
References
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Journal ArticleDOI

Performance of low-loss RF MEMS capacitive switches

TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI

Distributed MEMS true-time delay phase shifters and wide-band switches

TL;DR: In this paper, a coplanar waveguide (CPW) transmission line with fixed-fixed beam MEMS bridge capacitors placed periodically over the transmission line, thus creating a slow-wave structure was designed.
Proceedings ArticleDOI

Lifetime characterization of capacitive RF MEMS switches

TL;DR: In this paper, the first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated and their lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage.
Journal ArticleDOI

High-isolation CPW MEMS shunt switches. 2. Design

TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Journal ArticleDOI

Contact physics of gold microcontacts for MEMS switches

TL;DR: In this article, the authors present a tribological study of gold metallic contacts regarding contact resistance, heat dissipation, and surface damage in the normal-force regime of tens to hundreds of /spl mu/N, which is typical of the contact forces from microactuation.