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Journal ArticleDOI

RF MEMS switches and switch circuits

Gabriel M. Rebeiz, +1 more
- 01 Dec 2001 - 
- Vol. 2, Iss: 4, pp 59-71
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TLDR
In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
Abstract
MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches.

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Citations
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Journal ArticleDOI

Modelling And Analysis Of A MEMS Approach To DC Voltage Step Up Conversion

TL;DR: In this paper, the principle of a novel voltage step-up converter based on a micromachined variable parallel-plate capacitor in combination with an electrostatic actuator was studied.
Proceedings ArticleDOI

RF MEMS devices

TL;DR: The proposed MEMS multiport switch has demonstrated a superior RF performance up to 20 GHz and the tuning range of the variable capacitor was measured and found to be 280%, which far exceeds that of the traditional parallel plate MEMS variable capacitors.
Journal ArticleDOI

RF-MEMS Capacitive Switches Fabricated Using Printed Circuit Processing Techniques

TL;DR: In this article, the authors presented radio frequency microelectromechanical systems (RF-MEMS) capacitive switches fabricated using printed circuit processing techniques, where the key feature of this approach is the use of most commonly used flexible circuit film, Kapton E polyimide film, as the movable switch membrane.

Novel RF MEMS Switch and Packaging Concepts

TL;DR: In this paper, radio-frequency microelectromechanical systems (RF~MEMS) are highly miniaturized devices intended to switch, modulate, filter or tune electrical signals from DC to microwave frequencies.
Proceedings ArticleDOI

RF-MEMS switchable inductors for tunable bandwidth BAW filters

TL;DR: In this article, a switchable inductor was used to increase the capacity of a ladder BAW filter by up to 25% with an improved out-of-band rejection and without degrading its selectivity.
References
More filters
Journal ArticleDOI

Performance of low-loss RF MEMS capacitive switches

TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI

Distributed MEMS true-time delay phase shifters and wide-band switches

TL;DR: In this paper, a coplanar waveguide (CPW) transmission line with fixed-fixed beam MEMS bridge capacitors placed periodically over the transmission line, thus creating a slow-wave structure was designed.
Proceedings ArticleDOI

Lifetime characterization of capacitive RF MEMS switches

TL;DR: In this paper, the first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated and their lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage.
Journal ArticleDOI

High-isolation CPW MEMS shunt switches. 2. Design

TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Journal ArticleDOI

Contact physics of gold microcontacts for MEMS switches

TL;DR: In this article, the authors present a tribological study of gold metallic contacts regarding contact resistance, heat dissipation, and surface damage in the normal-force regime of tens to hundreds of /spl mu/N, which is typical of the contact forces from microactuation.