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Journal ArticleDOI

Semiconductor optical parametric generators in isotropic semiconductor diode lasers

B. J. Bijlani, +2 more
- 27 Aug 2013 - 
- Vol. 103, Iss: 9, pp 091103
TLDR
In this paper, an intracavity semiconductor optical parametric generator in multiple-quantum well AlGaAs/InGaAs Bragg reflection waveguide laser emitting between 986 and 995 nm was presented.
Abstract
We report on the characteristics of an intracavity semiconductor optical parametric generator in multiple-quantum well AlGaAs/InGaAs Bragg reflection waveguide lasers emitting between 986 and 995 nm. The cavity of the laser is phase-matched for down-conversion of pump photons to a signal between 1739 and 1767 nm and an idler between 2235 and 2328 nm. The normalized conversion efficiency is calculated to be 1.23×103 %W−1cm−2 above laser threshold and 1.25×104 %W−1cm−2 below threshold. The demonstrated device is potential for the realization of integrated parametric devices such as electrically pumped entangled photon-pair sources and optical parametric oscillation, where quantum optical effects can unfold.

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Citations
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Journal ArticleDOI

Monolithic semiconductor chips as a source for broadband wavelength-multiplexed polarization entangled photons.

TL;DR: In this article, the authors demonstrate the direct generation of broadband wavelength-multiplexed polarization entangled photons from a semiconductor chip for the first time, without the use of any off-chip compensation or interferometry.
Journal ArticleDOI

Broadband indistinguishability from bright parametric downconversion in a semiconductor waveguide

TL;DR: In this paper, the authors explore the characteristics of co-propagating twin beams created in a type-II ridge BRW and examine the effect of their inevitable multi-photon contributions on the observed photon bunching.
Journal ArticleDOI

Two Polarization Entangled Sources from the Same Semiconductor Chip

TL;DR: In this article, the authors demonstrate two polarization-entangled photon sources in a single monolithic semiconductor waveguide, which is achieved through concurrent utilization of two spontaneous parametric down-conversion (SPDC) processes.
Journal ArticleDOI

Photon pair sources in AlGaAs: from electrical injection to quantum state engineering

TL;DR: In this paper, the authors present the last achievements on AlGaAs quantum photonic devices emitting nonclassical states of light at room temperature by spontaneous parametric down conversion (SPDC), which combines the advantages of a mature fabrication technology, a high nonlinear coefficient, a SPDC wavelength in the C-telecom band and the possibility of electrical injection.
Journal ArticleDOI

Invited Article: Time-bin entangled photon pairs from Bragg-reflection waveguides

TL;DR: In this article, a source with optimized nonlinearity for preparing time-bin entangled photons in the telecommunication wavelength range was used for constructing entangled photon pairs in a single photon detector.
References
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Journal ArticleDOI

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Journal ArticleDOI

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Journal ArticleDOI

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TL;DR: In this article, the change in refractive index Delta n produced by injection of free carriers in InP, GaAs, and InGaAsP was theoretically estimated and the results were in reasonably good agreement with the limited experimental data available.
Journal ArticleDOI

Free-Space distribution of entanglement and single photons over 144 km

TL;DR: In this article, the authors reported the violation of the CHSH inequality measured by two observers separated by 144 km between the Canary Islands of La Palma and Tenerife via an optical free-space link using the Optical Ground Station (OGS) of the European Space Agency (ESA).
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