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Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation
TLDR
In this article, the authors present an overview of the history of semiconductors and their application in the field of energy harvesting and heat generation and dissipation, as well as a discussion of the current state of the art.Abstract:
I. Fundamentals 1. Introduction to Semiconductors 2. Electron Energy Bands 3. Carrier Transport 4. Optical Waves 5. Photon Generation 6. Heat Generation and Dissipation II. Devices 7. Edge-Emitting Laser 8. Vertical- Cavity Lasers 9. Nitride Light Emitters 10. Electroabsorption Modulator 11. Amplification Photodetectorread more
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Journal ArticleDOI
Efficiency droop in nitride-based light-emitting diodes
TL;DR: In this paper, the authors provide a snapshot of the current state of droop research, reviews currently discussed droop mechanisms, contextualizes them, and proposes a simple yet unified model for the LED efficiency droop.
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Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
TL;DR: In this article, a staggered InGaN quantum well with step-function-like In content in the quantum well offers significantly improved radiative recombination rate and optical gain in comparison to the conventional type-I In-GaN QW.
Journal ArticleDOI
Efficient High-Power Laser Diodes
Paul Crump,G. Erbert,H. Wenzel,C. Frevert,C. M. Schultz,K.-H. Hasler,R. Staske,Bernd Sumpf,A. Maassdorf,F. Bugge,S. Knigge,G. Trankle +11 more
TL;DR: In this paper, a review of efforts to increase ηE is presented and it is shown that for well-optimized structures, the residual losses are dominated by the p-side waveguide and nonideal internal quantum efficiency.
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Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.
TL;DR: The basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices are described.
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InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon
TL;DR: In this article, high density (∼1011 cm−2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures were grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy.