Journal ArticleDOI
SiC MOSFET Reliability Update
TLDR
In this paper, the key reliability results from Time-Dependent Dielectric Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements indicate that the SiC MOSFETs can demonstrate excellent lifetime and stable operation in the field.Abstract:
Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent lifetime and stable operation in the field.read more
Citations
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Journal ArticleDOI
Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
TL;DR: A novel active overcurrent protection scheme through dynamic evaluation of fault current level is proposed and a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper protection method.
Journal ArticleDOI
A Gate Drive With Power Over Fiber-Based Isolated Power Supply and Comprehensive Protection Functions for 15-kV SiC MOSFET
TL;DR: In this paper, a 15kV silicon carbide (SiC) MOSFET gate drive is presented, which features high commonmode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions.
Journal ArticleDOI
Gate Oxide Degradation of SiC MOSFET in Switching Conditions
Remy Ouaida,Maxime Berthou,Javier León,Xavier Perpiñà,Sebastien Oge,Pierre Brosselard,Charles Joubert +6 more
TL;DR: In this article, a specific aging test has been developed to monitor and characterize the electrical parameters of the SiC MOSFET, which allows estimations of the health state and predictions of the remaining lifetime prior to its failure.
Journal ArticleDOI
Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
TL;DR: In this article, threshold voltage instability was investigated for 4H-SiC MOSFETs with phosphorus-doped (POCl3-annealed) and nitrided gate oxides.
Proceedings ArticleDOI
Design and performance evaluation of overcurrent protection schemes for silicon carbide (SiC) power MOSFETs
TL;DR: In this paper, two overcurrent protection methods are proposed to improve the reliability and overall cost of the SiC MOSFET based converter, and a phase-leg configuration based step-down converter is built to evaluate the performance of the proposed protection schemes under various conditions, considering variation of fault type, decoupling capacitance, protection circuit parameters, etc.
References
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Journal ArticleDOI
Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC
M.M. Mathur,J.A. Cooper +1 more
TL;DR: In this article, time-dependent dielectric breakdown (TDDB) measurements are reported on n-type 6H-SiC MOS capacitors formed by thermal oxidation.
Journal ArticleDOI
Improved reliability of NO-nitrided SiO 2 grown on p-type 4H-SiC
TL;DR: In this paper, the reliability of oxides grown on p-type 4H-SiC can be dramatically improved by NO nitridation, and the flat-band voltage, interface-trap density and leakage current were observed after 5000 s in the case of NO nitrided oxides.
Journal ArticleDOI
Assessing the reliability of silicon nitride capacitors in a GaAs IC process
TL;DR: In this article, a method for predicting the lifetime of silicon nitride (SiN) capacitors for different voltages and temperatures was presented, based on techniques used for analyzing Si MOS capacitors.