Journal ArticleDOI
Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors
TLDR
In this article, the performance capabilities of InP-based pnp heterojunction bipolar transistors have been investigated using a drift-diffusion transport model based on a commercial numerical simulator.Abstract:
The performance capabilities of InP-based pnp heterojunction bipolar transistors (HBT's) have been investigated using a drift-diffusion transport model based on a commercial numerical simulator. The low hole mobility in the base is found to limit the current gain and the base transit time, which limits the device's cutoff frequency. The high electron majority carrier mobility in the n/sup +/ InGaAs base allows a reduction in the base doping and width while maintaining an adequately low base resistance. As a result, high current gain (>300) and power gain (>40 dB) are found to be possible at microwave frequencies. A cutoff frequency as high as 23 GHz and a maximum frequency of oscillation as high as 34 GHz are found to be possible without base grading. Comparison is made with the available, reported experimental results and good agreement is found. The analysis indicates that high-performance pnp InP-based HBT's are feasible, but that optimization of the transistor's multilayer structure is different than for the npn device.read more
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Fabrication and performance of GaN electronic devices
TL;DR: In this paper, the development of fabrication processes for these devices and the current state-of-the-art in device performance, for all of these structures, are discussed. And the authors also detail areas where more work is needed, such as reducing defect densities and purity of epitaxial layers, the need for substrates and improved oxides and insulators, improved p-type doping and contacts and an understanding of the basic growth mechanisms.
Journal ArticleDOI
Ionization-induced carrier transport in InAlAs/InGaAs high electron mobility transistors
TL;DR: In this article, the authors performed two-dimensional device simulations on InAlAs/InGaAs high electron mobility transistors (HEMTs) for ion and pulsed laser excitation and found that the ionization-induced enhancement current is associated with a significant lowering of the source/channel barrier.
Journal ArticleDOI
Analytical modeling and numerical simulation of the short-wave infrared electron-injection detectors
TL;DR: In this article, the electron-injection detectors operate in the short-wave infrared range and utilize a type-II band alignment in InP/GaAsSb/InGaAs material system.
Journal ArticleDOI
Challenges, myths, and opportunities in hot carrier solar cells
TL;DR: The principles of the concept of the hot carrier solar cell will be discussed along with some myths that hinder the future development of such devices.
Journal ArticleDOI
Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance
TL;DR: In this paper, a high speed InGaAs/InP one-sided junction photodiode (OSJ-PD) with low junction capacitance is presented and investigated for the first time.
References
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Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
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Microwave Transistor Amplifiers: Analysis and Design
TL;DR: In this article, the authors derived the Input and Output Stability Circles and the Unilateral Constant-Gain Circles from two-port Matching Networks and Signal Flow Graphs.
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Material parameters of In1−xGaxAsyP1−y and related binaries
TL;DR: In this paper, various models for calculation of physical parameters in compound alloys are discussed and the results for In1−x Gax Asy P1−y quaternaries are presented.
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