Journal ArticleDOI
Simulation of ultra-small GaAs MESFET using quantum moment equations
J.-R. Zhou,David K. Ferry +1 more
Reads0
Chats0
TLDR
In this article, the authors developed a model based upon a set of quantum moment equations obtained from the Wigner function equation-of-motion (EoM) and demonstrated that these effects modify the electron density distribution and current density distribution both in the channel and near the source.Abstract:
Ultra-small MESFETs have characteristic lengths comparable to quantum lengths: wavelength, mean free path, etc. In a first attempt to incorporate these quantum lengths, the authors develop a model based upon a set of quantum moment equations obtained from the Wigner function equation-of-motion. Interesting time-dependent current oscillation behavior has been observed when a step voltage is applied to the initial steady state. The oscillation frequency is peaked around 500 GHz, which is related to the plasma response of the carriers in the channel. Quantum effects, such as barrier repulsion and penetration, have been demonstrated in the simulation. These effects modify the electron density distribution and current density distribution both in the channel and near the source. Modifications of the frequency spectrum of the oscillation current due to the quantum effects are obvious. >read more
Citations
More filters
Journal ArticleDOI
The quantum hydrodynamic model for semiconductor devices
TL;DR: The full three-dimensional quantum hydrodynamic (QHD) model is derived for the first time by a moment expansion of the Wigner–Boltzmann equation.
Journal ArticleDOI
Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
TL;DR: In this paper, a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 mn MOSFETs is presented.
Journal ArticleDOI
Concurrent thermal and electrical modeling of sub‐micrometer silicon devices
Jie Lai,Arun Majumdar +1 more
TL;DR: In this paper, a coupled thermal and electrical model is developed for sub-micron silicon semiconductor devices consisting of the hydrodynamic equations for electron transport and energy conservation equations for different phonon modes.
Journal ArticleDOI
Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies
TL;DR: In this paper, the influence of the intrinsic parameter fluctuations consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and random-dopant fluctuation(RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits is investigated.
Proceedings ArticleDOI
Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices
TL;DR: In this paper, the authors incorporate an effective potential in a three-dimensional MOSFET simulation, in which the transport is handled by an ensemble Monte Carlo approach, and find that the threshold voltage is shifted and the carrier density is moved away from the interface, both effects given by quantization provided within the channel.
References
More filters
Journal ArticleDOI
On the Quantum Correction For Thermodynamic Equilibrium
TL;DR: In this article, the Boltzmann formula for the probability of a configuration is given in classical theory by means of a probability function, and the result discussed is developed for the correction term.
Journal ArticleDOI
Quantum mechanics as a statistical theory
TL;DR: In this article, an attempt is made to interpret quantum mechanics as a statistical theory, or more exactly as a form of non-deterministic statistical dynamics, which may hence be considered as an interpretation of quantum kinematics.
Journal ArticleDOI
On the Quantum Correction for Thermodynamic Equilibrium
Joseph E. Mayer,William Band +1 more
TL;DR: In this paper, it was shown that instead of Wigner's approximation, instead of the classical potential U in the exponent by U-kTf, where f is the same as Wigneer's function, the probability of any configurational position is then proportional to exp −U/kT, with U the potential energy.
Journal ArticleDOI
Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport
TL;DR: In this article, Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, AlP, InAs, GaP) and some of their alloys were performed at two lattice temperatures (77 and 300 K).
Journal ArticleDOI
Generalized scaling theory and its application to a ¼ micrometer MOSFET design
TL;DR: In this paper, a generalized scaling theory was proposed to allow for independent scaling of the FET physical dimensions and applied voltages, while still maintaining constant the shape of the electric field pattern.
Related Papers (5)
Quantum correction to the equation of state of an electron gas in a semiconductor.
M. G. Ancona,Gerald J. Iafrate +1 more