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Journal ArticleDOI

Sintering of Copper Particles for Die Attach

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TLDR
In this paper, a feasibility analysis of sintering of copper particles for die attach is presented, where porosity, Young's modulus as well as electrical and thermal conductivities of sintered layers are analyzed.
Abstract
First steps are taken toward a low-cost alternative to silver sintering as a highly reliable die attach technology for deep drilling applications and future power electronic modules. In this feasibility analysis, we evaluate sintering of copper particles for die attach. Particulate copper pastes are pretreated in H2 atmosphere (50 mbar) in order to gain oxide-free particles. Subsequently, particles are sintered at a pressure of 40 N/mm2 and a temperature of 350°C for 2 min. Porosity, Young's modulus as well as electrical and thermal conductivities of sintered layers are analyzed. Moreover, shear tests at ambient temperature are performed for evaluating the adhesion of monometallic as well as Cu-Au bonds according to the American military standard for chip-substrate contacts (MIL-STD-883H, method 2019.8).

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Journal ArticleDOI

Power cycle reliability of SiC devices with metal-sinter die-attach and thermostable molding

TL;DR: In this paper, the thermal reliability of metal paste sintering die-attach is evaluated for high voltage and high power devices, which are used in electric vehicles, railway trains, or power grid systems.
DissertationDOI

Mesoscale microstructure evolution, reliability and failure analysis of high temperature transient liquid phase sintering joints

S. A. Moeini
TL;DR: In this paper, phase field modeling of the microstructure of TLPS materials fabricated by different processing methods will be conducted, and efforts will also be conducted to identify failure modes and mechanisms experimentally under dynamic, power and thermal cycling loads as a function of critical microstructural features.
References
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Journal ArticleDOI

Reduction of CuO and Cu2O with H2: H embedding and kinetic effects in the formation of suboxides

TL;DR: The results show the importance of kinetic effects for the formation of well-defined suboxides during a reduction process and the activation of oxide catalysts.

Semiconductor Material and Device Characterization, 3rd Edition

Abstract: DESCRIPTION This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.
Journal ArticleDOI

Novel large area joining technique for improved power device performance

TL;DR: In this paper, a diffusion welding-based low-temperature joining technique based on the principle of diffusion welding has been developed for joining a silicon wafer to suitable substrates.
Journal ArticleDOI

Electroless silver coating on fine copper powder and its effects on oxidation resistance

TL;DR: In this article, the effect of electroless silver coating on fine copper powder (3.4 μm) and its effects on oxidation resistance were investigated by varying the silver contents.
Journal ArticleDOI

High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment

TL;DR: In this article, a low-temperature sintering of nanoscale silver paste was used to achieve high temperature operation of SiC power semiconductor devices by using stencil-printed layers of the nano-scale silver paste on Au or Ag metallized direct bonded copper (DBC) substrates for die-attachment.
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