Journal ArticleDOI
SiO2‐induced substrate current and its relation to positive charge in field‐effect transistors
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TLDR
In this paper, an inverse relation was found between the initial rise time of oxide current transients and both the electron and hole currents, therefore a correlation exists between the positive charge and electron or hole currents.Abstract:
Experimental data are presented for the substrate current (holes), which accompanies electron injection into the oxide of n‐channel field‐effect transistor structures, in the tunneling regime. Dependencies of the effect on oxide thickness and on the metal gate material were investigated. An inverse relation was found between the initial rise time of oxide current transients and both the electron and hole currents. It is shown that these initial current increases are related to positive charge, therefore a correlation exists between the positive charge and electron or hole currents. The strength of impact ionization in SiO2 is discussed on the basis of band‐structure arguments and it is concluded that there are difficulties in explaining the substrate current by impact ionization. A technique for fast measurements of capacitance‐voltage shifts at the end of an applied high field pulse is described.read more
Citations
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Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
TL;DR: In this paper, the authors summarized recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si-O-N (silicon oxynitride) gate dielectrics on Si-based devices.
Journal ArticleDOI
Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
TL;DR: In this article, two mechanisms triggered by electron heating in the oxide conduction band are discussed: trap creation and band gap ionization by carriers with energies exceeding 2 and 9 eV, respectively.
Journal ArticleDOI
Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
K.F. Schuegraf,Chenming Hu +1 more
TL;DR: In this paper, a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 /spl Aring/ and 130 /spl Ring/, is presented, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses.
Journal ArticleDOI
On the breakdown statistics of very thin SiO2 films
TL;DR: In this article, a new model to describe the breakdown statistics of thin SiO2 films is presented, and the obtained distribution of failures has been found to provide very good fits of the experimental statistical data that correspond to both constant-current and constant-voltage stress experiments.
Journal ArticleDOI
Trap generation and occupation dynamics in SiO2 under charge injection stress
TL;DR: In this article, the effect of enduring charge injection on the physical properties of the SiO2 layer of a metal-oxide-semiconductor structure is studied by means of a novel characterization method.
References
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Journal ArticleDOI
Interface trap generation in silicon dioxide when electrons are captured by trapped holes
TL;DR: In this article, a characteristic interface trap was observed in a hole trapping experiment when electrons were captured by trapped holes injected by an avalanche in the silicon, which could be explained by the generation of new electronic states through relaxation of strained bonds which were proposed to be the origin of hole traps.
Journal ArticleDOI
Electron Scattering by Pair Production in Silicon
TL;DR: In this paper, the energy-dependent rate for inelastic scattering of electrons by production of electron-hole pairs is computed by first-order perturbation theory for silicon using a screened Coulomb interaction with a frequency and momentum-dependent dielectric function calculated for silicon in the random-phase approximation.
Journal ArticleDOI
Scattering by ionization and phonon emission in semiconductors
R. C. Alig,S. Bloom,C. W. Struck +2 more
TL;DR: In this paper, the pair-number probability distribution of a particle with energy $E$ ultimately creates pairs, is calculated recursively with increasing energy, and the first and second moments of the distribution yield pair-creation energy, the Fano factor, and quantum yield for semiconductors.
Journal ArticleDOI
Electron states in α-quartz: A self-consistent pseudopotential calculation
James R. Chelikowsky,M. Schlüter +1 more
TL;DR: In this article, a self-consistent pseudopotentials are used to investigate the electronic structure of $\ensuremath{\alpha}$-quartz and find excellent agreement between theory and experiment with respect to photoemission and uv absorption data.
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Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors
C. L. Anderson,C. R. Crowell +1 more
TL;DR: In this article, the threshold energies for energy and momentum-conserving impact ionization of electron-hole pairs in actual semiconductors are determined by differential analysis of the energy-wave-vector relations of the participating charge carriers and phonons.