Journal ArticleDOI
Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy
Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,Basanta Roul,A. T. Kalghatgi,S. B. Krupanidhi +5 more
TLDR
In this paper, a surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS I-V curves and found that it is strongly dependent on the size of QDs.Abstract:
InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.read more
Citations
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Charge Storage and Quantum Confinement Resilience in Colloidal Indium Nitride Nanocrystals
TL;DR: Colloidal indium nitride nanocrystals (InN NCs) are stable heavily-doped nanomaterials with as-prepared electron densities around 7.4 × 1020 cm-3, independent of size, making these attracti...
Journal ArticleDOI
Oblique angle deposited InN quantum dots array for infrared detection
Shyam Murli Manohar Dhar Dwivedi,Anupam Ghosh,Hemant Ghadi,Punam Murkute,P. Chinnamuthu,Shubhro Chakrabartty,Subhananda Chakrabarti,Satyaban Bhunia,Aniruddha Mondal +8 more
TL;DR: Indium Nitride (InN) quantum dots (QDs) were synthesized on Si substrate by oblique angle deposition method and the deposited InN QDs were of the order of 5-50"nm in diameter with density ∼7"×"109/cm2 as discussed by the authors.
Journal ArticleDOI
Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy
TL;DR: In this article, self-assembled InN dots were fabricated on GaN using 4H-SiC(0001) vicinal substrates (4° off toward [11-20] ).
Journal ArticleDOI
Temperature dependent electron delocalization in CdSe/CdS type-I core-shell systems: An insight from scanning tunneling spectroscopy
TL;DR: In this article, the authors studied the temperature dependence of selective delocalization process through scanning tunneling spectroscopy and found that the electrons are confined to the core at low temperatures and above a certain temperature, they become delocalized up to the shell leading to a decrease in the conduction band edge.
References
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Journal ArticleDOI
A simple model for the ionization potential, electron affinity, and aqueous redox potentials of small semiconductor crystallites
TL;DR: In this article, the photochemical redox potential of one carrier, as a function of the size of the crystal, has been studied in the case of a small number of electrons.
A simple model for the ionization potential, electron affinity, and aqueous redox potentials of small semiconductor crystallites
Abstract: Large semiconductor crystals have intrinsic electronic properties dependent upon the bulk band structure. As the crystal becomes small, a new regime is entered in which the electronic properties (excited states, ionization potential, electron affinity) should be strongly dependent upon the electron and hole in a confined space. We address the possibility of a shift in the photochemical redox potential of one carrier, as a function of crystallite size. As a semiquantitative guide, one might expect a shift on the order of h2/8em*R2 due to the kinetic energy of localization in the small crystallite. We model the elementary quantum mechanics of a charged crystallite using (a) the effective mass approximation, (b) an electrostatic potential for dielectric polarization, and (c) penetration of the carrier outside the crystallite in a cases of small effective mass. Shifts of several tenths of an eV appear possible in crystallites of diameter 50 A. The carrier charge density reside near the crystallite surface if ...
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Unusual properties of the fundamental band gap of InN
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff,Yoshiki Saito,Yasushi Nanishi +8 more
TL;DR: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques as discussed by the authors.
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Indium nitride (InN): A review on growth, characterization, and properties
TL;DR: In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.
Journal ArticleDOI
Optical bandgap energy of wurtzite InN
TL;DR: Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy as discussed by the authors, and growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x-ray diffraction, and reflection high energy electron diffraction.