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Skyrmions in magnetic multilayers

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In this article, the fundamental topological physics underlying these chiral spin textures, the key factors for materials optimization, and current developments and future challenges are discussed, and a few promising directions that will advance the development of skyrmion based spintronics will be highlighted.
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This article is published in Physics Reports.The article was published on 2017-08-23 and is currently open access. It has received 417 citations till now. The article focuses on the topics: Magnetic skyrmion & Spin engineering.

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Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications.

TL;DR: The field of magnetic skyrmions has been actively investigated across a wide range of topics during the last decades as discussed by the authors, including information storage, logic computing gates and non-conventional devices such as neuromorphic computing devices.
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Magnetic Skyrmion Materials.

TL;DR: The materials science and materials chemistry of magnetic skyrmions are described using the classification scheme of theskyrmion forming microscopic mechanisms, including the generation of emergent magnetic and electric field by statics and dynamics of skrymions and the inherent magnetoelectric effect.
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Journal ArticleDOI

Multiferroic and magnetoelectric materials

TL;DR: A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements that arises through the quantum mechanical phenomenon of exchange.
Journal ArticleDOI

Current-driven excitation of magnetic multilayers

TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
Journal ArticleDOI

Introduction to Solid State Physics

A R Plummer
- 01 Jul 1967 - 
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
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Q1. What are the contributions in "Skyrmions in magnetic multilayers" ?

In this review article, the fundamental topological physics underlying these chiral spin textures, the key factors for materials optimization, and current developments and future challenges will be discussed. This review article is organized as follows: 1. Topological physics of magnetic skyrmions 1. 1 Origin of spin topology 1. 2 Real space topological physics In the end, a few promising directions that will advance the development of skyrmion based spintronics will be highlighted. 

Due to the large Hund’s rule exchange coupling, between conduction electrons and local magnetization vectors, which is generally on the scale of eV, the spin of the former always tries to follow adiabatically the spatial distribution of the latter. 

Enhanced topological transport, in particular the topological Hall effect, is also beneficial for efficient electrical readout of magnetic skyrmions, which is a pivotal step towards the future of skyrmion based electronics. 

The sign reversal of magnetization 𝒎 and concomitant topological charge can be done by reversing the polarity of the perpendicular magnetic fields. 

Very recently, a single electron spin in diamond with a nitrogen vacancy center was used as a probe to assess the vectorial spin profile of skyrmion, as well as the associated spin topology [138]. 

Utilizing the exchange bias generated by an AFM layer, it is then possible to investigate the formation of magnetic skyrmions in the absence of applied field at room temperature. 

due to the onset of four-spin antiferromagnetic exchange interactions, these magnetic skyrmions are forming a square lattice, rather than the typically observed triangular lattice. 

nanometer-sized skyrmions can be generated and deleted both locally and reversibly on demand by a spin-polarized tunneling current (of amplitude 1 nA) from the STM tip. 

This is because the stray field energy will increase with increasing film thickness whereas the DMI energy is usually independent of the film thickness. 

This directional dependence suggests that spatially divergent currents and SOTs are most likely responsible for transforming the chiral band domains into magnetic skyrmion bubbles. 

As previously mentioned, topologically protected magnetic skyrmions in metallic chiral magnets can efficiently be manipulated by a spin transfer torque using the spin-polarized electric current [24, 130]. 

Very recently, a concept of hybrid skyrmion structure has been proposed by patterning magnetic nanodisks onto a B20 skyrmion material, in which the enhanced stability of skyrmion state and suppression of skyrmion Hall effect have been revealed through a micromagnetic simulation study [281]. 

More interestingly, by passing a vertical current from the STM tip, these nanoscale skyrmions can be addressed locally through spin transfer torques [53]. 

The orientation of the spin rotation plane within the wall depends on the stray field energy cost associated with the magnetic domain wall geometry: the width of the domain wall and height of the wall (equivalent to the thickness of the film 𝑡t). 

In these systems, due to the competition between the interfacial DMI, magneto-static, Zeeman energy terms, one can use the evolution of domain width and hence the domain wall surface energy as a function of perpendicular magnetic field (𝐻 ) to determine the strength of DMI [42].