Proceedings ArticleDOI
Small-Signal Modeling of mm- Wave MOSFET up to 110 GHz in 22nm FDSOI Technology
Reads0
Chats0
TLDR
In this paper, a comprehensive analysis on small-signal modeling of mm-wave transistor in 22nm FDSOI technology is presented based on experimental S-parameters up to 110 GHz of a 22FDX® thick-oxide n-MOSFET and analytical parameter extraction approach.Abstract:
In this paper, a comprehensive analysis on small-signal modeling of mm-wave transistor in 22nm FDSOI technology is presented. The model is constructed based on experimental S-parameters up to 110 GHz of a 22FDX® thick-oxide n-MOSFET and analytical parameter extraction approach. The non-quasi static effect is addressed thoroughly in the equivalent circuit model for high frequency validity. The bias-dependent series source and drain resistances are considered to account for the overlap regions between the gate and the highly doped source/drain regions. In addition, a simple RC network is included at the output to model the innegligible substrate coupling at mm-wave frequencies. Excellent agreements between model prediction and measurement are observed in the interested bandwidth for various bias conditions.read more
Citations
More filters
Proceedings ArticleDOI
W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs
Quang Huy Le,Dang Khoa Huynh,Defu Wang,Zhixing Zhao,Steffen Lehmann,Thomas Kampfe,Matthias Rudolph +6 more
TL;DR: In this paper, the W-band noise performance of the 22nm FDSOI CMOS technology is characterized comprehensively in terms of device geometries using the tuner-based noise measurement approach.
Proceedings ArticleDOI
RF Characterization and Small Signal Extraction of 28nm FDSOI MOSFETs up to 110GHz
TL;DR: In this article , a hybrid cascade de-embedding method was applied to deembed the on-chip external elements of the device test structure associated with the RF pads and access interconnect lines, and the complete extrinsic and intrinsic small-signal parameters were extracted at multi bias points based on the direct parameter extraction approach.
Journal ArticleDOI
Systematic characterization for RF small-signal parameter extraction of 28 nm FDSOI MOSFETs up to 110 GHz
TL;DR: In this paper , two-step and hybrid de-embedding methodologies have been applied and compared for the accurate deembedding of the on-chip RF test pads and access interconnect line elements.
References
More filters
Proceedings ArticleDOI
22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications
Rick Carter,J. Mazurier,L. Pirro,J-U. Sachse,Peter Baars,Jürgen Faul,Carsten Grass,G. Grasshoff,Peter Javorka,Thorsten Kammler,A. Preusse,S. Nielsen,T. Heller,J. Schmidt,Heimanu Niebojewski,P-Y. Chou,Elliot John Smith,Elke Erben,C. Metze,C. Bao,Yogadissen Andee,I. Aydin,S. Morvan,J. Bernard,E. Bourjot,Thomas Feudel,David Harame,R. Nelluri,Hans-Jürgen Thees,L. M-Meskamp,J. Kluth,R. Mulfinger,Mahbub Rashed,R. Taylor,C. Weintraub,Jan Hoentschel,Maud Vinet,Jamie Schaeffer,B. Rice +38 more
TL;DR: 22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications and achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with ∼30% fewer masks.
Journal ArticleDOI
A New Approach for SOI Devices Small-Signal Parameters Extraction
A. Bracale,V. Ferlet-Cavrois,N. Fel,Daniel Pasquet,J.L. Gautier,J.L. Pelloie,J. du Port de Poncharra +6 more
TL;DR: In this article, a method for small-signal parameters determination for a conventional MOSFET high-frequency model and somewhat inspired from methods applied to MESFET technology is presented.
Journal ArticleDOI
MOSFET bias dependent series resistance extraction from RF measurements
TL;DR: In this article, a simple technique to determine MOSFET gate-bias dependent source and drain series resistances from experimental S-parameters is presented, using the measured data of a single device.
Journal ArticleDOI
Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements
B. Kazemi Esfeh,Valeria Kilchytska,V. Barral,Nicolas Planes,Michel Haond,Denis Flandre,J-P Raskin +6 more
TL;DR: In this paper, a detailed study of 28-nm fully-depleted silicon-on-insulator (FD-SOI) planar ultra-thin body and box (UTBB) MOSFETs for high frequency applications is presented.
Journal ArticleDOI
A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters
TL;DR: In this article, an S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented, which allows the direct and analytical determination of these components from measurements performed on a single device.
Related Papers (5)
Method and device for evaluating electric performances of an fdsoi transistor
Xavier Garros,Laurent Brunet +1 more