Journal ArticleDOI
Spatially resolved cathodoluminescence spectra of InGaN quantum wells
TLDR
In this article, a spatially resolved cathodoluminescence (CL) spectrum mapping revealed a strong exciton localization in InGaN single-quantum-wells (SQWs).Abstract:
Spatially resolved cathodoluminescence (CL) spectrum mapping revealed a strong exciton localization in InGaN single-quantum-wells (SQWs). Transmission electron micrographs exhibited a well-organized SQW structure having abrupt InGaN/GaN heterointerfaces. However, comparison between atomic force microscopy images for GaN-capped and uncapped SQWs indicated areas of InN-rich material, which are about 20 nm in lateral size. The CL images taken at the higher and lower energy side of the spatially integrated CL peak consisted of emissions from complementary real spaces, and the area was smaller than 60 nm in lateral size.read more
Citations
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Journal ArticleDOI
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
TL;DR: In this paper, a phase separation of the InGaN layer was clearly observed in the emission spectra, in which blue and red emission peaks appeared, in terms of the temperature dependence of the LEDs.
Journal ArticleDOI
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu,Akira Uedono,Akira Uedono,Takeyoshi Onuma,Benjamin A. Haskell,Arpan Chakraborty,T. Koyama,Paul T. Fini,Stacia Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra,Shuji Nakamura,Shigeo Yamaguchi,Shigeo Yamaguchi,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki,Jung Han,Takayuki Sota +19 more
TL;DR: Here it is explained why In-containing (Al,In,Ga)N bulk films exhibit a defect-insensitive emission probability, and it is concluded that localizing valence states associated with atomic condensates of In–N preferentially capture holes, which have a positive charge similar to positrons.
Journal ArticleDOI
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
Shigefusa F. Chichibu,Amber C. Abare,M. S. Minsky,Stacia Keller,S. B. Fleischer,John E. Bowers,Evelyn L. Hu,Umesh K. Mishra,Larry A. Coldren,Steven P. DenBaars,T. Sota +10 more
TL;DR: In this paper, the emission mechanisms of strained InxGa1−xN quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. The absorption edge was modulated by the quantum confined Stark effect and quantum confined Franz-Keldysh effect (QCFK) for the wells, in which, for the first approximation, the product of the piezoelectric field, FPZ and L exceed the valence band discontinuity, ΔEV.
Journal ArticleDOI
InGaN-based blue light-emitting diodes and laser diodes
TL;DR: InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2 mask area can have a lifetime of more than 10,000 hours and the localized energy states caused by In composition fluctuation in the In GaN active layer are related to the high efficiency of the InGaN-based emitting devices.
Journal ArticleDOI
InGaN-based violet laser diodes
TL;DR: In this paper, a long-lifetime violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement heterostructure laser diodes (LDs) were successfully fabricated using epitaxially laterally overgrown GaN by reducing a large number of threading dislocations originating from the interface between GaN and sapphire substrate.
References
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Book
The Blue Laser Diode: GaN based Light Emitters and Lasers
Shuji Nakamura,Gerhard Fasol +1 more
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
TL;DR: In this article, structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/In0.05Ga 0.95N (6 nm) multiple quantum wells.
Journal ArticleDOI
Shortest wavelength semiconductor laser diode
TL;DR: A group III nitride based separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness as small as 1.5 nm, was fabricated in this paper.
Journal ArticleDOI
Recombination dynamics of localized excitons in In 0.20 Ga 0.80 N- In 0.05 Ga 0.95 N multiple quantum wells
TL;DR: In this paper, the dynamical behavior of radiative recombination has been assessed in the multiple-quantum well structure by means of transmittance, electroreflectance (ER), photoluminescence excitation (PLE), and time-resolved photolumininescence (TRPL) spectroscopy.