Journal ArticleDOI
SrBi2Ta2O9 memory capacitor on Si with a silicon nitride buffer
Jin-Ping Han,T. P. Ma +1 more
TLDR
In this article, a SrBi2Ta2O9 thin film on a Si substrate separated by an ultrathin buffer layer of silicon nitride film was used to make ferroelectric memory capacitors.Abstract:
We have made ferroelectric memory capacitors by depositing a SrBi2Ta2O9 thin film on a Si substrate separated by an ultrathin buffer layer of silicon nitride film. The hysteresis in the capacitance–voltage curves suggests a sizable memory window of 2 V with a programming voltage swing of ±7 V. The switching time is estimated to be on the order of nanosecond based on the results of a one-shot pulse experiment. The results from the fatigue test indicate a slight degradation of the memory window after 1011 switching cycles. These properties are encouraging for the development of ferroelectric memory transistors.read more
Citations
More filters
Journal ArticleDOI
Ferroelectric field effect transistors for memory applications.
TL;DR: The fabrication and characterization of two promising capacitor-less memory architectures that marry the ferroelectric polarization directly to the channel of a field effect transistor is reported on.
Journal ArticleDOI
Dielectric property and conduction mechanism of ultrathin zirconium oxide films
Jane P. Chang,Y.-S. Lin +1 more
TL;DR: In this article, the conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields, and the MOS devices showed low leakage current, small hysteresis (<50 mV), and low interface state density.
Journal ArticleDOI
Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors
TL;DR: In this article, the performance of the p-channel metal-ferroelectric-insulator-silicon field effect transistors (MFISFETs) using Pt∕SrBi2Ta2O9(SBT)∕HfO2∕Si and Pt ∕(Bi,La)4Ti3O12(BLT)
Journal ArticleDOI
Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application
TL;DR: In this paper, ZrO2 films were deposited on p-Si(100) wafers by a rapid thermal chemical vapor deposition process using a zirconium (IV) t-butoxide Zr(OC4H9)4 precursor and oxygen.
Journal ArticleDOI
Nanowire transistors with ferroelectric gate dielectrics: Enhanced performance and memory effects
TL;DR: In this article, the authors incorporated lead zirconate titanate (PZT) into In2O3 nanowire transistors to replace the commonly used SiO2 as the gate dielectric.
References
More filters
Journal ArticleDOI
Physics of the ferroelectric nonvolatile memory field effect transistor
S. L. Miller,P. J. McWhorter +1 more
TL;DR: In this article, the operation of the ferroelectric nonvolatile memory field effect transistor is theoretically examined extensively for the first time, and the theoretical results provide unique insight into the effects of geometrical and material parameters on the electrical properties of the transistor.
Journal ArticleDOI
An experimental 512-bit nonvolatile memory with ferroelectric storage cell
J.T. Evans,R. Womack +1 more
TL;DR: The authors discuss the properties of the ferroelectric ceramics used in integrated circuit memories, the operation of a destructively read ferro electric memory cell, and the organization of the 512 ECD die, including its onboard test circuitry.
Journal ArticleDOI
'Border traps' in MOS devices
TL;DR: In this paper, the terminology for oxide charges developed in 1979 was updated to include near-interfacial oxide traps that communicate with the underlying Si and that these defects collectively be called border traps.
Related Papers (5)
Physics of the ferroelectric nonvolatile memory field effect transistor
S. L. Miller,P. J. McWhorter +1 more