Journal ArticleDOI
Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application
TLDR
In this paper, ZrO2 films were deposited on p-Si(100) wafers by a rapid thermal chemical vapor deposition process using a zirconium (IV) t-butoxide Zr(OC4H9)4 precursor and oxygen.Abstract:
ZrO2 is investigated in this work to replace SiO2 as the gate dielectric material in metal-oxide-semiconductor devices for its high dielectric constant, good thermal stability on silicon, and large band gap. ZrO2 films were deposited on p-Si(100) wafers by a rapid thermal chemical vapor deposition process using a zirconium (IV) t-butoxide Zr(OC4H9)4 precursor and oxygen. At temperatures between 300 and 400 °C, the reaction was thermally activated with an activation energy of 29 kcal/mol, consistent with a β-hydride elimination mechanism leading to ZrO2 deposition. In this regime at substrate temperatures below 350 °C, one atomic layer of ZrO2 can be deposited after each alternating exposure to the precursor and oxygen, ideal for achieving conformal coverage of ZrO2 over high aspect ratio features. Stoichiometric, uniform, and amorphous ZrO2 was obtained, and highly conformal step coverage of the deposited ZrO2 was observed on 300 nm features with an aspect ratio of 4. The dielectric constant of ZrO2 achie...read more
Citations
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Book ChapterDOI
Atomic layer deposition
Mikko Ritala,Markku Leskelä +1 more
TL;DR: The atomic layer deposition (ALD) method as discussed by the authors is a chemical gas phase thin film deposition method based on alternate saturative surface reactions, in which the source vapors are pulsed into the reactor alternately, one at a time, separated by purging or evacuation periods.
Journal ArticleDOI
Isolated Surface Hydrides: Formation, Structure, and Reactivity
TL;DR: This review of surface hydrides describes their key structural features and spectroscopic signatures and discusses their reactivity and stability and also point out unexplored areas.
Journal ArticleDOI
Structural and optical properties of thin zirconium oxide films prepared by reactive direct current magnetron sputtering
TL;DR: In this paper, thin films of zirconium oxide have been deposited onto glass and Si(100) substrates at room temperature by reactive dc magnetron sputtering of a metallic Zr target in an argon-oxygen atmosphere.
Journal ArticleDOI
Dielectric property and conduction mechanism of ultrathin zirconium oxide films
Jane P. Chang,Y.-S. Lin +1 more
TL;DR: In this article, the conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields, and the MOS devices showed low leakage current, small hysteresis (<50 mV), and low interface state density.
Journal ArticleDOI
Overview of electroceramic materials for oxide semiconductor thin film transistors
TL;DR: In this paper, the authors focus on recent progress in applying electroceramic materials for oxide-semiconductor thin-film transistors, and discuss current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability.
References
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Journal ArticleDOI
An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
TL;DR: In this article, the M-O-S diode was introduced, and a theory for its operation in the absence of surface states was obtained, and it was shown that surface states with non-zero relaxation times may increase the capacitance of the device, as well as affect the proportion of applied voltage which appears across the silicon.
Journal ArticleDOI
Thermodynamic stability of binary oxides in contact With silicon
K. J. Hubbard,Darrell G. Schlom +1 more
TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
Journal ArticleDOI
The electronic structure at the atomic scale of ultrathin gate oxides
TL;DR: In this paper, the authors used electron-energy-loss spectroscopy in a scanning transmission electron microscope to measure the chemical composition and electronic structure, at the atomic scale, across gate oxides as thin as one nanometre.
Journal ArticleDOI
Crystalline Oxides on Silicon: The First Five Monolayers
TL;DR: In this paper, a metaloxide-semiconductor capacitor using SrTiO{sub 3} as an alternative to SiOthinsp{sub 2} yields the extraordinary result of t{sub eqlt}10 {Angstrom}.
Journal ArticleDOI
Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications
TL;DR: In this article, the authors present the present knowledge on tantalum pentoxide (Ta 2 O 5 ) thin films and their applications in the field of microelectronics and integrated microtechnologies.