Journal ArticleDOI
Surface‐Dominated Transport Properties of Silicon Nanowires
Jiansheng Jie,Jiansheng Jie,Wenjun Zhang,Wenjun Zhang,Kui-Qing Peng,Guodong Yuan,Chun-Sing Lee,Shuit-Tong Lee +7 more
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TLDR
In this article, the surface-related contributions to transport properties in nanostructures by using Si nanowires (NWs) as a paradigm were evaluated. But surface effects are rarely studied and the detailed mechanisms are still unclear.Abstract:
Surface effects are widely recognized to significantly influence the properties of nanostructures, although the detailed mechanisms are rarely studied and unclear. Herein we report for the first time a quantitative evaluation of the surface-related contributions to transport properties in nanostructures by using Si nanowires (NWs) as a paradigm. Critical to this study is the capability of synthesizing SiNWs with predetermined conduction type and carrier concentration from Si wafer of known properties using the recently developed metal-catalyzed chemical etching method. Strikingly, the conductance of p-type SiNWs is is substantively larger in air than that of the original wafer, is sensitive to humidity and volatile gases, and thinner wires show higher conductivity. Further, SiNW-based field-effect transistors (FETs) show NWs to have a hole concentration two orders of magnitude higher than the original wafer. In vacuum, the conductivity of SiNWs dramatically decreases, whereas hole mobility increases. The device performances are further improved by embedding SiNW FETs in 250 nm SiO 2, which insulates the devices from atmosphere and passivates the surface defects of NWs. Owing to the strong surface effects, n-type SiNWs even change to exhibit p-type characteristics. The totality of the results provides definitive confirmation that the electrical characteristics of SiNWs are dominated by surface states. A model based on surface band bending and carrier scattering caused by surface states is proposed to interpret experimental results. The phenomenon of surface-dependent transport properties should be generic to all nanoscale structures, and is significant for nanodevice design for sensor and electronic applications.read more
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Journal ArticleDOI
Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide.
Sivacarendran Balendhran,Junkai Deng,Jian Zhen Ou,Sumeet Walia,James Scott,Jianshi Tang,Kang L. Wang,Matthew R. Field,Salvy P. Russo,Serge Zhuiykov,Michael S. Strano,Nikhil V. Medhekar,Sharath Sriram,Madhu Bhaskaran,Kourosh Kalantar-zadeh +14 more
TL;DR: It is demonstrated that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering.
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Surface Chemistry and Electrical Properties of Germanium Nanowires
TL;DR: Germanium nanowires with p-and n-dopants were synthesized by chemical vapor deposition and used to construct complementary field effect transistors in this paper, where electrical transport and x-ray photoelectron spectroscopy data were correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs.
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One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications
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Journal ArticleDOI
Silicon nanowire array photoelectrochemical solar cells
TL;DR: In this article, photoelectrochemical (PEC) measurements showed that the electroless etching SiNWs are remarkably photoactive and effective in enhancing photovoltaic properties including photocurrent and photowage.
Journal ArticleDOI
Silicon nanowires for advanced energy conversion and storage
TL;DR: In this article, the authors review the recent achievements on silicon nanowires for advanced energy conversion and storage applications including photovoltaics, photocatalysis, thermoelectrics, lithium-ion batteries and supercapacitors.
References
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Journal ArticleDOI
Ballistic carbon nanotube field-effect transistors
TL;DR: It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes.
Journal ArticleDOI
Extreme oxygen sensitivity of electronic properties of carbon nanotubes
TL;DR: The results, although demonstrating that nanotubes could find use as sensitive chemical gas sensors, likewise indicate that many supposedly intrinsic properties measured on as-prepared nanotube may be severely compromised by extrinsic air exposure effects.
Journal ArticleDOI
Single-nanowire electrically driven lasers
TL;DR: In this paper, the authors investigate the feasibility of achieving electrically driven lasing from individual nanowires and show that these structures can function as Fabry-Perot optical cavities with mode spacing inversely related to the nanowire length.
Journal ArticleDOI
High Performance Silicon Nanowire Field Effect Transistors
TL;DR: In this article, the influence of source-drain contact thermal annealing and surface passivation on key transistor properties was examined, and it was shown that thermal annaling and passivation of oxide defects using chemical modification can increase the average transconductance from 45 to 800 nS and average mobility from 30 to 560 cm 2 /V
Journal ArticleDOI
Semiconductor nanowires and nanotubes
TL;DR: In this article, a review highlights the recent advances in the field, using work from this laboratory for illustration, and the understanding of general nanocrystal growth mechanisms serves as the foundation for the rational synthetic control of one-dimensional nanoscale building blocks, novel properties characterization and device fabrication based on nanowire building blocks.