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Systematic treatment of displacements, strains, and electric fields in density-functional perturbation theory

Xifan Wu, +2 more
- 05 Jul 2005 - 
- Vol. 72, Iss: 3, pp 035105
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TLDR
In this paper, an approach for computing all of these various response tensors in a unified and systematic fashion is presented for two materials, hexagonal ZnO and rhombohedral, at zero temperature.
Abstract
The methods of density-functional perturbation theory may be used to calculate various physical response properties of insulating crystals including elastic, dielectric, Born charge, and piezoelectric tensors. These and other important tensors may be defined as second derivatives of an appropriately defined energy functional with respect to atomic-displacement, electric-field, or strain perturbations, or as mixed derivatives with respect to two of these perturbations. The resulting tensor quantities tend to be coupled in complex ways in polar crystals, giving rise to a variety of variant definitions. For example, it is generally necessary to distinguish between elastic tensors defined under different electrostatic boundary conditions, and between dielectric tensors defined under different elastic boundary conditions. Here, we describe an approach for computing all of these various response tensors in a unified and systematic fashion. Applications are presented for two materials, hexagonal ZnO and rhombohedral $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}$, at zero temperature.

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Applications of Modern Ferroelectrics

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Quantum-mechanical condensed matter simulations with CRYSTAL

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Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites

TL;DR: In this paper, the authors propose that defect tolerance emerges from fundamental electronic-structure properties, including the orbital character of the conduction and valence band extrema, the chargecarrier effective masses, and the static dielectric constant.
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Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

TL;DR: In this article, the out-of-plane and in-plane dielectric response of TMDs in trigonal prismatic and octahedral coordination, as well as for hexagonal boron nitride (h-BN) with a thickness ranging from monolayer and bilayer to bulk, was analyzed.
References
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Journal ArticleDOI

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.

TL;DR: An efficient scheme for calculating the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set is presented and the application of Pulay's DIIS method to the iterative diagonalization of large matrices will be discussed.
Journal ArticleDOI

Self-Consistent Equations Including Exchange and Correlation Effects

TL;DR: In this paper, the Hartree and Hartree-Fock equations are applied to a uniform electron gas, where the exchange and correlation portions of the chemical potential of the gas are used as additional effective potentials.
Journal ArticleDOI

Inhomogeneous Electron Gas

TL;DR: In this article, the ground state of an interacting electron gas in an external potential was investigated and it was proved that there exists a universal functional of the density, called F[n(mathrm{r})], independent of the potential of the electron gas.
Journal ArticleDOI

Ab initio molecular dynamics for liquid metals.

TL;DR: In this paper, the authors present an ab initio quantum-mechanical molecular-dynamics calculations based on the calculation of the electronic ground state and of the Hellmann-Feynman forces in the local density approximation.
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