Journal ArticleDOI
Temperature dependence of the radiative lifetime in porous silicon
TLDR
In this article, the radiative lifetime of porous silicon is investigated between liquid helium and room temperature using photoluminescence decay measurements, and the functional dependence of the lifetime on photon energy reveals the confinement character of the recombination carriers.Abstract:
Using photoluminescence decay measurements the radiative lifetime of porous silicon is investigated between liquid helium and room temperature. The radiative recombination mechanism in porous silicon is in essence the same as in bulk silicon, viz. a phonon mediated indirect transition. The functional dependence of the lifetime on photon energy reveals the confinement character of the recombination carriers. The high external photoluminescence efficiency is well explained by the reduction of nonradiative recombination owing to low mobility, to low dimensionality, and to the extreme low surface recombination rate, and is further enhanced by the relatively small refractive index.read more
Citations
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Raman spectroscopy of optical phonon confinement in nanostructured materials
TL;DR: In this paper, a review of the results on the Raman spectroscopic investigations of optical phonon confinement in nanocrystalline semiconductor and ceramic/dielectric materials, including those in selenium, cadmium sulphide, zinc oxide, thorium oxide, and nano-diamond, is presented.
Journal ArticleDOI
Light emission from porous silicon and related materials
TL;DR: In this paper, the authors present an overview of current experimental studies on optical properties of porous Si and related materials, and discuss the mechanism of strong visible luminescence from Si nanocrystallites that have unique optical properties.
Journal ArticleDOI
Optical properties of porous silicon
TL;DR: In this article, the optical properties of porous Si films produced by electrochemical dissolution of Si are reviewed and an inverse relationship between the optical gap energy and the average nanoparticle size has been obtained demonstrating the quantum confinement of electron-hole pairs in Si nanocrystallites.
Journal ArticleDOI
Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2
TL;DR: The photoluminescence decay characteristics of silicon nanocrystals in dense ensembles fabricated by ion implantation into silicon dioxide are observed to vary in proportion to the calculated local density of optical states as mentioned in this paper.
Journal ArticleDOI
Monte-Carlo simulations of the recombination dynamics in porous silicon
H. Eduardo Roman,Lorenzo Pavesi +1 more
TL;DR: In this article, a simple lattice model describing the recombination dynamics in visible light emitting porous silicon is presented, where each occupied lattice site represents a Si crystal of nanometer size.
References
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Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Journal ArticleDOI
Porous silicon formation: A quantum wire effect
Volker Lehmann,Ulrich Gösele +1 more
TL;DR: In this article, it was shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band gap energy but also may also explain the dissolution mechanism that leads to porous silicon formation.
Book
Quantum Processes in Semiconductors
TL;DR: In this paper, the energy and momentum conservation of phonon-impurity coupling in the diamond lattice is discussed. But the authors do not consider the effect of photo-ionization on photo-deionization of a hydrogenic acceptor.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Visible electroluminescence from porous silicon
Nobuyoshi Koshida,Hideki Koyama +1 more
TL;DR: In this paper, photoluminescent porous Si (PS) layers exhibit visible electroluminescence (EL) when the forward current density reaches a certain value, stable visible (orange) light is uniformly emitted through a semitransparent electrode.