Journal ArticleDOI
The expansivities and the thermal degradation of some layer compounds
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TLDR
In this article, the thermal expansion coefficients and decomposition products at high temperatures under vacuum have been determined for a number of layer compounds; SnS2, SnSe2, ZrS2 and TiS2; all of which have crystal structures based on that of cadmium iodide.Abstract:
The thermal expansion coefficients and the decomposition products at high temperatures under vacuum have been determined for a number of layer compounds; SnS2, SnSe2, SnSSe, ZrS2, HfS2 and TiS2, all of which have crystal structures based on that of cadmium iodide, and∈-GaSe. In all compounds the expansion perpendicular to the layers (∥c) is much greater than that parallel to the layers (⊥c). This is ascribed to the effect of the weak van der Waal's bonding between layers. Thermal degradation at high temperatures (up to 900° C) under vacuum usually follows a route via the monochalcogenide or the sub-chalcogenide to the oxide.read more
Citations
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Properties of gallium selenide single crystal
TL;DR: In this article, a search of the published literature amassed over 630 articles and an attempt was made to organize this material by growth, structural and mechanical, thermal, electrical and optical properties.
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Hybrid two-dimensional materials in rechargeable battery applications and their microscopic mechanisms
TL;DR: This review describes some of the exciting progress achieved in the economic production of graphenes, 2D transition metal dichalcogenides (TMDCs), and their composites and highlights the uncovered structure-performance relationships while utilizing advanced microscopic techniques.
Journal ArticleDOI
Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride
Mei Zhang,Yiming Zhu,Xinsheng Wang,Qingliang Feng,Shanlin Qiao,Wen Wen,Yanfeng Chen,Menghua Cui,Jin Zhang,Congzhong Cai,Liming Xie +10 more
TL;DR: The synthesis of hexagonal ZrS2 monolayer and few layers on hexagonal boron nitride (BN) using ZrCl4 and S as precursors is reported.
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Hybrid two-dimensional materials in rechargeable battery applications and their microscopic mechanisms
TL;DR: In this paper, a review of 2D nanomaterials and their composites for energy storage devices, especially rechargeable batteries, offers opportunities to timely tackle the challenges of ever growing clean and sustainable energy demands.
Journal ArticleDOI
Synthesis of SnS2/SnS fullerene-like nanoparticles: a superlattice with polyhedral shape.
TL;DR: Tin disulfide pellets were laser ablated in an inert gas atmosphere, and closed cage fullerene-like nanoparticles were produced, suggesting that one of the driving forces to form tubules in misfits is the annihilation of dangling bonds at the rim of the layered structure.
References
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Journal ArticleDOI
Developments in Electron Microscopy and Analysis
M. E. Taylor,John A. Venables +1 more
Journal ArticleDOI
Rigid-layer lattice vibrations and van der waals bonding in hexagonal MoS2
TL;DR: Using a triple Raman spectrometer, the authors observed the rigid-layer E 2 g 2 mode in hexagonal MoS 2, and the interlayer forces were shown to be about 100 times weaker than the intralayer forces.
Journal ArticleDOI
The growth by iodine vapour transport techniques and the crystal structures of layer compounds in the series TiSxSe2−x, TiSxTe2−x, TiSexTe2−x
TL;DR: In this paper, large single crystals up to 20×10×0.5 mm in size have been grown of dichalcogenide compounds as a function of composition, and growth conditions and crystal lattice parameters are given for solid solutions in the series.
Journal ArticleDOI
Intercalation and lattice expansion in titanium disulfide
TL;DR: The temperature coefficient of expansion has been measured for the a and c axes of titanium disulfide, and of its intercalates with a metal, lithium, and an organic base, s−collidine as mentioned in this paper.
Journal ArticleDOI
Phase Study on Binary System Ga-Se
Hiromichi Suzuki,Ryûichi Mori +1 more
TL;DR: The phase diagram of the system Ga-Se has been determined by the differential thermal analysis (DTA) as mentioned in this paper, and the main features of the diagram are as follows: (1) the melting point of GaSe is 938± 3°C and Ga2Se3 is 1005±3°C, and the monotectic transition occurs at 915°C in the lower composition region than 50 at.%Se.
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