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Grain size-dependent electrical properties of nanocrystalline ZnO
TL;DR: In this paper, the dc and acelectrical conductivity of undoped and Bi-doped nanocrystalline ZnO was investigated as a function of grain size, and the difference in dc conductivity was discussed in terms of the grain size dependence of the average trap density.
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Degradation of a CuxS/CdS solar cell in hot, moist air and recovery in hydrogen and air
TL;DR: In this article, a polycrystalline, thin-film CuxS/CdS solar cell was exposed to air saturated with water vapor at temperatures between 27 and 67 C for up to 6 1/2 h.
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Analysis of temperature dependent I―V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
TL;DR: In this paper, the Richardson constant and the mean barrier height were obtained as 167 A K - 2 cm - 2 and 061 EV in the temperature range 80-180 K, respectively.
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New rectifying semiconductor structure by molecular beam epitaxy
TL;DR: In this article, a new unipolar rectifying semiconductor structure is demonstrated by an asymmetric potential barrier created by an MBE-grown sawtooth-shaped composition wave of AlxGa1−xAs between layers of n-type GaAs.
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Effect of gate voltage on hot-electron and hot phonon interaction and transport in a submicrometer transistor
TL;DR: In this paper, the effects of gate voltage on heat generation and transport in a metal-semiconductor field effect transistor made of gallium arsenide (GaAs) with a gate length of 0.2 μm were investigated.