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The physics of semiconductor devices

H. Grubin
- 01 Dec 1979 - 
- Vol. 15, Iss: 12, pp 1438-1438
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This article is published in IEEE Journal of Quantum Electronics.The article was published on 1979-12-01. It has received 14205 citations till now. The article focuses on the topics: Semiconductor device.

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Grain size-dependent electrical properties of nanocrystalline ZnO

TL;DR: In this paper, the dc and acelectrical conductivity of undoped and Bi-doped nanocrystalline ZnO was investigated as a function of grain size, and the difference in dc conductivity was discussed in terms of the grain size dependence of the average trap density.
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Degradation of a CuxS/CdS solar cell in hot, moist air and recovery in hydrogen and air

TL;DR: In this article, a polycrystalline, thin-film CuxS/CdS solar cell was exposed to air saturated with water vapor at temperatures between 27 and 67 C for up to 6 1/2 h.
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Analysis of temperature dependent I―V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

TL;DR: In this paper, the Richardson constant and the mean barrier height were obtained as 167 A K - 2 cm - 2 and 061 EV in the temperature range 80-180 K, respectively.
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New rectifying semiconductor structure by molecular beam epitaxy

TL;DR: In this article, a new unipolar rectifying semiconductor structure is demonstrated by an asymmetric potential barrier created by an MBE-grown sawtooth-shaped composition wave of AlxGa1−xAs between layers of n-type GaAs.
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Effect of gate voltage on hot-electron and hot phonon interaction and transport in a submicrometer transistor

TL;DR: In this paper, the effects of gate voltage on heat generation and transport in a metal-semiconductor field effect transistor made of gallium arsenide (GaAs) with a gate length of 0.2 μm were investigated.