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Mechanism of electron conduction in self-assembled alkanethiol monolayer devices.
TL;DR: The I(V, T) measurement results show, for the first time, temperature‐independent electron transport characteristics, proving direct tunneling as the transport mechanism in alkanethiol SAMs.
Journal ArticleDOI
Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
TL;DR: In this paper, an ultrathin interfacial silicon nitride layer was added to the metal/SiN/Ge Schottky diode to suppress strong Fermi level pinning, which resulted in effective control of Schotty barrier height.
Journal ArticleDOI
Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells
Yimao Wan,Chris Samundsett,James Bullock,James Bullock,Thomas Allen,Mark Hettick,Di Yan,Peiting Zheng,Xinyu Zhang,Jie Cui,Josephine McKeon,Ali Javey,Andres Cuevas +12 more
TL;DR: It is demonstrated that electrodes functionalized with thin magnesium fluoride films significantly improve the performance of silicon solar cells, allowing the demonstration of a 20.1%-efficient c-Si solar cell.
Journal ArticleDOI
Pure crystal orientation and anisotropic charge transport in large-area hybrid perovskite films
Namchul Cho,Feng Li,Bekir Turedi,Lutfan Sinatra,Smritakshi P. Sarmah,Manas R. Parida,Makhsud I. Saidaminov,Banavoth Murali,Victor M. Burlakov,Alain Goriely,Omar F. Mohammed,Tom Wu,Osman M. Bakr +12 more
TL;DR: It is found that the OPC films spontaneously form periodic microarrays that are distinguishable from general polycrystalline perovskite materials in terms of their crystal orientation, film morphology and electronic properties.
Journal ArticleDOI
Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors
TL;DR: In this paper, the impact of states at the insulator/AlGaN interface on the capacitance-voltage (C-V) characteristics of a metal/insulator/alGaN/GaN heterostructure (MISH) capacitor was examined using a numerical solver of a Poisson equation and taking into account the electron emission rate from the interface states.