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Journal ArticleDOI
High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
Tatsuro Maeda,Keiji Ikeda,Shu Nakaharai,Tsutomu Tezuka,Naoharu Sugiyama,Y. Moriyama,Shinichi Takagi +6 more
TL;DR: In this paper, the Schottky-barrier source/drain (S/D) germanium-on-insulator (GOI) MOSFETs were demonstrated for the first time, where a buried oxide and a silicon substrate were used as a gate dielectric and a bottom gate electrode, respectively.
Unipolar spin diodes and transistors
TL;DR: Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor.
Journal ArticleDOI
Quantum Dot Research: Current State and Future Prospects
TL;DR: A review of the current state of research involving semiconductor quantum dots, providing a brief review of their unique properties, and an introduction explaining the importance of quantum dot research can be found in this paper.
Journal ArticleDOI
Improvement of detector fabrication by the planar process
TL;DR: In this article, a planar process is described, which enables the fabrication of low noise high quality Si radiation detectors, by using ion implantation for doping and oxide passivation for reduction of the leakage current.
Journal ArticleDOI
Electrostatic potential for a hyperbolic probe tip near a semiconductor
TL;DR: In this article, the electrostatic potential of a metallic probe tip near a semiconductor was examined, assuming circular symmetry and using prolate spheroidal coordinates in vacuum and Cartesian coordinates in the semiconductor.