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Journal ArticleDOI

The physics of semiconductor devices

H. Grubin
- 01 Dec 1979 - 
- Vol. 15, Iss: 12, pp 1438-1438
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This article is published in IEEE Journal of Quantum Electronics.The article was published on 1979-12-01. It has received 14205 citations till now. The article focuses on the topics: Semiconductor device.

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Modulation of Thermoelectric Power of Individual Carbon Nanotubes

TL;DR: Thermoelectric power (TEP) of individual single walled carbon nanotubes (SWNTs) has been measured at mesoscopic scales using a microfabricated heater and thermometers and strong modulations of TEP were observed in the single-electron conduction limit.
Journal ArticleDOI

Electrical Contacts to Molecular Layers by Nanotransfer Printing

TL;DR: In this article, a nanotransfer printing (nTP) method was introduced to fabricate top-contact electrodes in Au/1,8-octanedithiol/GaAs junctions.
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Electrical current distribution across a metal–insulator–metal structure during bistable switching

TL;DR: In this article, the authors combine scanning electron microscopy and electron-beam-induced current imaging with transport measurements to show that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects.
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Vertical tunnel field-effect transistor

TL;DR: In this paper, a vertical field effect transistor (FET) with a vertical gate controlling the band-to-band tunneling width is presented, and the operation of the device is shown by means of both experimental results as well as two-dimensional computer simulations.
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Recent development of carbon quantum dots regarding their optical properties, photoluminescence mechanism, and core structure

TL;DR: A great deal of confusion remains regarding the PL mechanism of CDs as well as their structural properties, so a summary and discussion of the QYs and PL lifetimes reported in recent years is presented.