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The physics of semiconductor devices

H. Grubin
- 01 Dec 1979 - 
- Vol. 15, Iss: 12, pp 1438-1438
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This article is published in IEEE Journal of Quantum Electronics.The article was published on 1979-12-01. It has received 14205 citations till now. The article focuses on the topics: Semiconductor device.

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Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors

TL;DR: This work demonstrates the highly sensitive MIR photodetection of QD/graphene hybrid phototransistors by using plasmonic silicon (Si) QDs doped with boron (B), and the resulting UV-to-MIR ultrabroadband photodetic features ultrahigh responsivity, gain, and specific detectivity.
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Conduction mechanism of non‐Ohmic zinc oxide ceramics

TL;DR: In this article, a new energy-band model composed of a thin intergranular layer with traps sandwiched between Schottky barriers formed opposite each other is proposed to explain the non-Ohmic property of ZnO ceramics.
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Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires

TL;DR: A novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process and a new piezotronic switch device with an "on" and "off" ratio of approximately 120 has been demonstrated.
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Electrical properties and conduction mechanisms of Ru‐based thick‐film (cermet) resistors

TL;DR: In this article, an experimental study of the electrical conduction mechanisms in a thin-film (cermet) resistor is presented. But the authors focus on the electrical transport properties of the resistors.
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Charging of pattern features during plasma etching

TL;DR: In this article, the localized charging of a rectangular trench during the plasma etching of a perfectly insulating surface was modeled assuming an isotropic electron flux and monodirectional ion bombardment.