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Journal ArticleDOI

The physics of semiconductor devices

H. Grubin
- 01 Dec 1979 - 
- Vol. 15, Iss: 12, pp 1438-1438
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This article is published in IEEE Journal of Quantum Electronics.The article was published on 1979-12-01. It has received 14205 citations till now. The article focuses on the topics: Semiconductor device.

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Book ChapterDOI

Coherent phonons in condensed media

TL;DR: In this article, the authors present an overview of recent achievements in the field of condensedmatter physics, including the detection of coherent phonons and phonon-polaritons with femtosecond time resolution.
Journal ArticleDOI

Local impedance imaging and spectroscopy of polycrystalline ZnO using contact atomic force microscopy

TL;DR: In this paper, a nanoimpedance microscopy/spectroscopy (NIM) method was used to study the quality of a tip/surface contact and transport behavior of individual grains and grain boundaries in polycrystalline ZnO.
Journal ArticleDOI

Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films

TL;DR: Both inversion and depletion mode n−channel MOSFETs have been fabricated on β-SiC thin films grown by chemical-vapor deposition as mentioned in this paper, and stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively.
Journal ArticleDOI

Admittance Spectroscopy of Cu-Doped ZnO Crystals

TL;DR: In this paper, an experiment to determine the electronic state of Cu in a ZnO crystal is performed using the admittance spectroscopy technique at the frequency range from 100 Hz to 100 kHz and the temperature range from -160 to +80°C.
Journal ArticleDOI

Miller and noise effects in a synchronizing flip-flop

TL;DR: In this paper, the effects of Miller coupling and thermal noise on a synchronizing flip-flop are described and a worst case mean-time-between-failure bound is established.