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Journal ArticleDOI

The physics of semiconductor devices

H. Grubin
- 01 Dec 1979 - 
- Vol. 15, Iss: 12, pp 1438-1438
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This article is published in IEEE Journal of Quantum Electronics.The article was published on 1979-12-01. It has received 14205 citations till now. The article focuses on the topics: Semiconductor device.

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Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band

TL;DR: The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.
Journal ArticleDOI

AlGaN ultraviolet photoconductors grown on sapphire

TL;DR: In this article, the spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature, and the carrier lifetime derived from the voltage-dependent responsivity is 0.13−0.36 ms.
Journal ArticleDOI

The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells

TL;DR: In this article, the authors analyzed heterojunction with intrinsic thin layer (HIT) solar cells using numerical simulations and found that the differences between the device physics of cells with p- and n-type crystalline silicon (c-Si) wafers are substantial.
Journal ArticleDOI

Optimum mobility, contact properties, and open-circuit voltage of organic solar cells: A drift-diffusion simulation study

TL;DR: In this article, the existence of an optimum mobility derived from simulation depends strongly on the assumptions made for contact and recombination properties and obtain a comprehensive picture how charge carrier mobility influences the parameters of organic solar cells.
Proceedings ArticleDOI

Low-power FPGA using pre-defined dual-Vdd/dual-Vt fabrics

TL;DR: This is the first in-depth study on applying both dual-Vdd/dual-Vt to FPGA considering circuits, fabrics and CAD algorithms and develops CAD algorithms including power-sensitivity based voltage assignment and simulated-annealing based placement to leverage such fabrics.