scispace - formally typeset
Journal ArticleDOI

The physics of semiconductor devices

H. Grubin
- 01 Dec 1979 - 
- Vol. 15, Iss: 12, pp 1438-1438
Reads0
Chats0
About: 
This article is published in IEEE Journal of Quantum Electronics.The article was published on 1979-12-01. It has received 14205 citations till now. The article focuses on the topics: Semiconductor device.

read more

Citations
More filters
Journal ArticleDOI

Bio-organic-semiconductor-field-effect-transistor based on deoxyribonucleic acid gate dielectric

Birendra Singh, +3 more
- 28 Jul 2006 - 
TL;DR: Using deoxyribonucleic acid (DNA)-based biopolymer, derived from salmon milt and roe sac waste by-products, for the gate dielectric region, a bio-organic field effect transistors (BiOFET) was proposed in this paper.
Journal ArticleDOI

Metal-dependent charge transfer and chemical interaction at interfaces between 3,4,9,10-perylenetetracarboxylic bisimidazole and gold, silver and magnesium

Ian G. Hill, +2 more
- 01 Dec 2000 - 
TL;DR: In this article, ultraviolet photoelectron spectroscopy (UPS) is used to investigate interfaces between the organic semiconductor 3,4,9,10-perylenetetracarboxylic bisimidazole (PTCBI) and Mg, Ag and Au.
Journal ArticleDOI

Study of forward I‐V plot for Schottky diodes with high series resistance

K. Sato, +1 more
- 01 Nov 1985 - 
TL;DR: In this paper, the currentvoltage characteristics of Schottky barrier diodes with series resistance were investigated and it was shown that by using Norde's function F(V)=V/2−(kT/q)ln(I/SAT2) at two different temperatures, barrier height, n−value or ideality factor, and series resistance can be determined even in the case 1
Journal ArticleDOI

Local charge carrier mobility in disordered organic field-effect transistors

C. Tanase, +4 more
- 01 Jun 2003 - 
TL;DR: In this article, it was shown that the conventional field-effect mobility is a good approximation for the local mobility of the charge carriers at the interface, and that in disordered organic field effect transistors, the local charge carrier mobility decreases from the semiconductor/insulator interface into the bulk.
Journal ArticleDOI

Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate

Yasuhiko Ishikawa, +6 more
- 01 Jul 2005 - 
TL;DR: In this paper, a tensile strain of Ge layers on Si substrate was shown to reveal an enhanced absorption of near-infrared light, which is effective for the photodiode application in Si-based photonics.