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The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis
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In this paper, an elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented, and the functional form of the optical absorption spectrum is determined, focusing on the joint density of states function, which dominates the absorption spectrum over the range of photon energies.Abstract:
An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Tauc gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.read more
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I. Introduction générale
TL;DR: In this article, plough tillage, reduced tillage and no-till were evaluated regarding their effects on physical, chemical and microbiological soil parameters in an on-farm research approach in two agricultural regions of Algeria (Annaba and Sétif).
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Electronic structure of the amorphous oxide semiconductor a-InGaZnO4―x: Tauc―Lorentz optical model and origins of subgap states
TL;DR: In this paper, an optical model and subgap electronic states for a representative amorphous oxide semiconductor, InGaZnO 4 (a-IGZO), were developed based on the Tauc-Lorentz model combined with a Lorentz-type oscillator.
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Effect of cobalt doping on the structural and optical properties of TiO2 films prepared by sol–gel process
TL;DR: In this paper, the structural and optical properties of pure and cobalt doped titanium dioxide thin films have been systematically studied by Rutherford backscattering, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and spectroscopic ellipsometry methods.
Journal ArticleDOI
Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides.
Bart Kuyken,Hua Ji,Stéphane Clemmen,Shankar Kumar Selvaraja,Hao Hu,Minhao Pu,Michael Galili,Palle Jeppesen,Geert Morthier,Serge Massar,Leif Katsuo Oxenløwe,Gunther Roelkens,Roel Baets +12 more
TL;DR: It is observed that the nonlinear optical properties of these waveguides degrade with time, but that this degradation can be reversed by annealing the samples.
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Hybrid carbon based nanomaterials for electrochemical detection of biomolecules
TL;DR: In this article, a review of the available data on the structural, chemical and electrochemical properties of hybrid carbon nanomaterials is presented, showing that the data is scattered, often inconsistent and even contradictory.
References
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Book
Electronic processes in non-crystalline materials
TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
Journal ArticleDOI
Optical Properties and Electronic Structure of Amorphous Germanium
Jan Tauc,R. Grigorovici,A. Vancu +2 more
TL;DR: In this article, the optical constants of amorphous Ge were determined for the photon energies from 0.08 to 1.6 eV, and the absorption is due to k-conserving transitions of holes between the valence bands as in p-type crystals.
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Amorphous and liquid semiconductors
TL;DR: In this article, the nature of the amorphous state and the electronic properties of the Amorphous Semi-conductors have been investigated in the context of liquid semiconductors.
MonographDOI
Hydrogenated amorphous silicon
TL;DR: In this article, the electronic density of states of amorphous silicon and their electronic states have been investigated in terms of defect reactions, thermal equilibrium and metastability, as well as their electronic properties.
Journal ArticleDOI
Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
TL;DR: The effect of thermal and structural disorder on the electronic structure of hydrogenated amorphous silicon is investigated by measurement of the shape of the optical absorption edge as a function of temperature and thermal evolution of hydrogen as discussed by the authors.
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