Journal ArticleDOI
Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogen
Y. Kamigaki,Y. Itoh +1 more
TLDR
In this paper, the growth kinetics of SiO2 films grown on silicon at 950 to 1100°C in an O2/N2 mixture was empirically studied, and it was found that a linear-parabolic law is in excellent agreement with the oxidation data under the oxygen partial pressure PO2 of 1 or 10−1 atm.Abstract:
Oxide growth kinetics of SiO2 films grown on silicon at 950 to 1100 °C in an O2/N2 mixture is empirically studied. It is found that a linear‐parabolic law is in excellent agreement with the oxidation data under the oxygen partial pressure PO2 of 1 or 10−1 atm. However, a parabolic law is obtained at 10−2 atm, and an inverse‐logarithmic law at 10−3 atm. The Mott‐Cabrera oxidation rate equation is adapted to the thermal oxidation of silicon in the case of PO2≲10−2 atm. Finally, 43.9 kcal/mole is derived as the activation energy value of silicon atoms entering into the oxide.read more
Citations
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Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics
Seiichi Iwata,Akitoshi Ishizaka +1 more
TL;DR: In this article, the ESCA measurement results on thin SiO2/Si samples are examined comprehensively, critically, and in detail to show that it is possible to correlate these results with MOS (metaloxide-semiconductor) device characteristics such as flatband (threshold) voltage, oxide breakdown field, mobile ion density, hole and electron trap density, and hot-carrier lifetime.
Journal ArticleDOI
Advantages of thermal nitride and nitroxide gate films in VLSI process
TL;DR: In this paper, a thermally grown silicon nitride film on a silicon substrate is proposed as the most promising candidate for a very-thin gate insulator, which improves the MOS characteristics by producing surface protection against impurity penetration and by producing good interfacial characteristics.
Journal ArticleDOI
SiSiO2 interface characterization by ESCA
TL;DR: In this article, the concentration profiles of oxide films on Si have been studied by using ESCA and ellipsometry, and the oxide films were found to be composed mostly of stoichiometric SiO 2 with a very thin (about 0.3 nm) layer of SiO at the SiSiO 2 interface.
Journal ArticleDOI
Atomic transport during growth of ultrathin dielectrics on silicon
TL;DR: In this article, an atomic transport in thermal growth of thin and ultrathin silicon oxide, nitride, and oxynitride films on Si is reviewed and the physico-chemical constitution of the involved surfaces and interfaces for each different dielectric material, as well as complementary studies of the gas, gas-surface, and solid phase chemistry.
Journal ArticleDOI
A novel MONOS nonvolatile memory device ensuring 10-year data retention after 10/sup 7/ erase/write cycles
S.-i. Minami,Y. Kamigaki +1 more
TL;DR: In this paper, a metaloxide-nitride-oxide-semiconductor (MONOS) structure whose top oxide is fabricated by chemical vapor deposition (CVD) on the nitride is proposed.
References
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Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
TL;DR: In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.
Journal ArticleDOI
Determination of the Properties of Films on Silicon by the Method of Ellipsometry
TL;DR: The use of exact reflection theory to interpret data allows the application of ellipsometry to the determination of the thicknesses and optical constants of surface films without the thickness limitations of approximate theory.